Tabula Rasaforn-Cz silicon-based photovoltaics
High-temperature annealing, known as Tabula Rasa (TR), proves to be an effective method for dissolving oxygen precipitate nuclei in n-Cz silicon and makes this material resistant to temperature-induced and process-induced lifetime degradation. Tabula Rasa is especially effective in n-Cz wafers with...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021
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| Online Access: | https://hdl.handle.net/1721.1/129670 |
| _version_ | 1826192032545112064 |
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| author | LaSalvia, Vincenzo Youssef, Amanda Jensen, Mallory Ann Looney, Erin E. Nemeth, William Page, Matthew Nam, Wooseok Buonassisi, Anthony Stradins, Paul |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering LaSalvia, Vincenzo Youssef, Amanda Jensen, Mallory Ann Looney, Erin E. Nemeth, William Page, Matthew Nam, Wooseok Buonassisi, Anthony Stradins, Paul |
| author_sort | LaSalvia, Vincenzo |
| collection | MIT |
| description | High-temperature annealing, known as Tabula Rasa (TR), proves to be an effective method for dissolving oxygen precipitate nuclei in n-Cz silicon and makes this material resistant to temperature-induced and process-induced lifetime degradation. Tabula Rasa is especially effective in n-Cz wafers with oxygen concentration >15 ppma. Vacancies, self-interstitials, and their aggregates result from TR as a metastable side effect. Temperature-dependent lifetime spectroscopy reveals that these metastable defects have shallow energy levels ~0.12 eV. Their concentrations strongly depend on the ambient gases during TR because of an offset of the thermal equilibrium between vacancies and self-interstitials. However, these metastable defects anneal out at typical cell processing temperatures ≥850°C and have little effect on the bulk lifetime of the processed cell structures. Without dissolving built-in oxygen precipitate nuclei, high-temperature solar cell processing severely degrades the minority carrier lifetimes to below 0.1 millisecond, while TR-treated n-Cz wafers after the cell processing steps exhibit carrier lifetimes above 2.2 milliseconds. |
| first_indexed | 2024-09-23T09:05:15Z |
| format | Article |
| id | mit-1721.1/129670 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T09:05:15Z |
| publishDate | 2021 |
| publisher | Wiley |
| record_format | dspace |
| spelling | mit-1721.1/1296702022-09-30T13:20:16Z Tabula Rasaforn-Cz silicon-based photovoltaics LaSalvia, Vincenzo Youssef, Amanda Jensen, Mallory Ann Looney, Erin E. Nemeth, William Page, Matthew Nam, Wooseok Buonassisi, Anthony Stradins, Paul Massachusetts Institute of Technology. Department of Mechanical Engineering High-temperature annealing, known as Tabula Rasa (TR), proves to be an effective method for dissolving oxygen precipitate nuclei in n-Cz silicon and makes this material resistant to temperature-induced and process-induced lifetime degradation. Tabula Rasa is especially effective in n-Cz wafers with oxygen concentration >15 ppma. Vacancies, self-interstitials, and their aggregates result from TR as a metastable side effect. Temperature-dependent lifetime spectroscopy reveals that these metastable defects have shallow energy levels ~0.12 eV. Their concentrations strongly depend on the ambient gases during TR because of an offset of the thermal equilibrium between vacancies and self-interstitials. However, these metastable defects anneal out at typical cell processing temperatures ≥850°C and have little effect on the bulk lifetime of the processed cell structures. Without dissolving built-in oxygen precipitate nuclei, high-temperature solar cell processing severely degrades the minority carrier lifetimes to below 0.1 millisecond, while TR-treated n-Cz wafers after the cell processing steps exhibit carrier lifetimes above 2.2 milliseconds. 2021-02-03T22:55:06Z 2021-02-03T22:55:06Z 2018-08 2020-06-24T18:52:19Z Article http://purl.org/eprint/type/JournalArticle 1062-7995 https://hdl.handle.net/1721.1/129670 LaSalvia, Vincenzo et al. "Tabula Rasaforn-Cz silicon-based photovoltaics." Progress in Photovoltaics: Research and Applications 27, 2 (August 2018): 136-143 © 2018 John Wiley & Sons en http://dx.doi.org/10.1002/pip.3068 Progress in Photovoltaics: Research and Applications Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Wiley Other repository |
| spellingShingle | LaSalvia, Vincenzo Youssef, Amanda Jensen, Mallory Ann Looney, Erin E. Nemeth, William Page, Matthew Nam, Wooseok Buonassisi, Anthony Stradins, Paul Tabula Rasaforn-Cz silicon-based photovoltaics |
| title | Tabula Rasaforn-Cz silicon-based photovoltaics |
| title_full | Tabula Rasaforn-Cz silicon-based photovoltaics |
| title_fullStr | Tabula Rasaforn-Cz silicon-based photovoltaics |
| title_full_unstemmed | Tabula Rasaforn-Cz silicon-based photovoltaics |
| title_short | Tabula Rasaforn-Cz silicon-based photovoltaics |
| title_sort | tabula rasaforn cz silicon based photovoltaics |
| url | https://hdl.handle.net/1721.1/129670 |
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