Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers
Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, com...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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Optical Society of America (OSA)
2021
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| Online Access: | https://hdl.handle.net/1721.1/129795 |
| _version_ | 1826194569038921728 |
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| author | Li, Nanxi Magden, Emir Salih Su, Zhan Singh, Neetesh Ruocco, Alfonso Xin, Ming Byrd, Matthew James Callahan, Patrick T. Bradley, Jonathan Baiocco, Christopher Vermeulen, Diedrik Rene Georgette Watts, Michael |
| author2 | Massachusetts Institute of Technology. Research Laboratory of Electronics |
| author_facet | Massachusetts Institute of Technology. Research Laboratory of Electronics Li, Nanxi Magden, Emir Salih Su, Zhan Singh, Neetesh Ruocco, Alfonso Xin, Ming Byrd, Matthew James Callahan, Patrick T. Bradley, Jonathan Baiocco, Christopher Vermeulen, Diedrik Rene Georgette Watts, Michael |
| author_sort | Li, Nanxi |
| collection | MIT |
| description | Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al₂O₃:Ho³⁺ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al₂O₃:Ho³⁺ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at < 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region. |
| first_indexed | 2024-09-23T09:58:18Z |
| format | Article |
| id | mit-1721.1/129795 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T09:58:18Z |
| publishDate | 2021 |
| publisher | Optical Society of America (OSA) |
| record_format | dspace |
| spelling | mit-1721.1/1297952022-09-26T14:55:12Z Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers Li, Nanxi Magden, Emir Salih Su, Zhan Singh, Neetesh Ruocco, Alfonso Xin, Ming Byrd, Matthew James Callahan, Patrick T. Bradley, Jonathan Baiocco, Christopher Vermeulen, Diedrik Rene Georgette Watts, Michael Massachusetts Institute of Technology. Research Laboratory of Electronics Lincoln Laboratory Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al₂O₃:Ho³⁺ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al₂O₃:Ho³⁺ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at < 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region. Defense Advanced Research Projects Agency (Grants HR0011- 12-2-0007 and HR0011-15-C-0056) 2021-02-17T19:38:12Z 2021-02-17T19:38:12Z 2018-01 2020-02-28T15:53:26Z Article http://purl.org/eprint/type/JournalArticle 1094-4087 https://hdl.handle.net/1721.1/129795 Li, Nanxi et al. "Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers." Optics Express 26, 3 (January 2018): 2220-2230 © 2018 Optical Society of America en http://dx.doi.org/10.1364/oe.26.002220 Optics Express Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Optical Society of America (OSA) OSA Publishing |
| spellingShingle | Li, Nanxi Magden, Emir Salih Su, Zhan Singh, Neetesh Ruocco, Alfonso Xin, Ming Byrd, Matthew James Callahan, Patrick T. Bradley, Jonathan Baiocco, Christopher Vermeulen, Diedrik Rene Georgette Watts, Michael Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers |
| title | Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers |
| title_full | Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers |
| title_fullStr | Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers |
| title_full_unstemmed | Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers |
| title_short | Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers |
| title_sort | broadband 2 µm emission on silicon chips monolithically integrated holmium lasers |
| url | https://hdl.handle.net/1721.1/129795 |
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