Realization of 2D crystalline metal nitrides via selective atomic substitution
Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of th...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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American Association for the Advancement of Science (AAAS)
2021
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| Online Access: | https://hdl.handle.net/1721.1/129979 |
| _version_ | 1811002320112058368 |
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| author | Cao, Jun Li, Tianshu Gao, Hongze Lin, Yuxuan Wang, Xingzhi Wang, Haozhe Palacios, Tomás Ling, Xi |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Cao, Jun Li, Tianshu Gao, Hongze Lin, Yuxuan Wang, Xingzhi Wang, Haozhe Palacios, Tomás Ling, Xi |
| author_sort | Cao, Jun |
| collection | MIT |
| description | Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of these TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo₅N₆ crystals with large area and high quality via in situ chemical conversion of layered MoS₂ crystals. The versatility of this general approach is demonstrated by expanding the method to synthesize W₅N₆ and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next-generation electronics. |
| first_indexed | 2024-09-23T15:46:39Z |
| format | Article |
| id | mit-1721.1/129979 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:46:39Z |
| publishDate | 2021 |
| publisher | American Association for the Advancement of Science (AAAS) |
| record_format | dspace |
| spelling | mit-1721.1/1299792022-10-02T04:01:07Z Realization of 2D crystalline metal nitrides via selective atomic substitution Cao, Jun Li, Tianshu Gao, Hongze Lin, Yuxuan Wang, Xingzhi Wang, Haozhe Palacios, Tomás Ling, Xi Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of these TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo₅N₆ crystals with large area and high quality via in situ chemical conversion of layered MoS₂ crystals. The versatility of this general approach is demonstrated by expanding the method to synthesize W₅N₆ and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next-generation electronics. Institute for Soldier Nanotechnologies, U.S. Army Research Office (Cooperative Agreement W911NF-18-2-0048) AFOSR FATE MURI (Grant FA9550-15-1-0514) NSF (Grant DMR 1231319) 2021-02-23T20:39:44Z 2021-02-23T20:39:44Z 2020-01 2019-05 2021-02-05T18:57:21Z Article http://purl.org/eprint/type/JournalArticle 2375-2548 https://hdl.handle.net/1721.1/129979 Cao, Jun et al. "Realization of 2D crystalline metal nitrides via selective atomic substitution." Science Advances 6, 2 (January 2020): eaax8784. en 10.1126/SCIADV.AAX8784 Science Advances Creative Commons Attribution NonCommercial License 4.0 https://creativecommons.org/licenses/by-nc/4.0/ application/pdf American Association for the Advancement of Science (AAAS) Science Advances |
| spellingShingle | Cao, Jun Li, Tianshu Gao, Hongze Lin, Yuxuan Wang, Xingzhi Wang, Haozhe Palacios, Tomás Ling, Xi Realization of 2D crystalline metal nitrides via selective atomic substitution |
| title | Realization of 2D crystalline metal nitrides via selective atomic substitution |
| title_full | Realization of 2D crystalline metal nitrides via selective atomic substitution |
| title_fullStr | Realization of 2D crystalline metal nitrides via selective atomic substitution |
| title_full_unstemmed | Realization of 2D crystalline metal nitrides via selective atomic substitution |
| title_short | Realization of 2D crystalline metal nitrides via selective atomic substitution |
| title_sort | realization of 2d crystalline metal nitrides via selective atomic substitution |
| url | https://hdl.handle.net/1721.1/129979 |
| work_keys_str_mv | AT caojun realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT litianshu realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT gaohongze realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT linyuxuan realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT wangxingzhi realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT wanghaozhe realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT palaciostomas realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution AT lingxi realizationof2dcrystallinemetalnitridesviaselectiveatomicsubstitution |