Ternary Lead Chalcogenide Alloys for Mid-Infrared Detectors

We demonstrate thin films of PbSe1−xSx and PbSe1−xTex lead chalcogenide ternary alloys as infrared detectors. The films were deposited on single crystal BaF2 substrates using physical vapor deposition. Detectivity in the wavelength range from 1 μm to 5 μm was measured at −40°C, and all films showed...

সম্পূর্ণ বিবরণ

গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: Su, P., Pujari, R., Boodhoo, V., Aggarwal, S., Bhattacharya, P., Maksimov, O., Wada, Kazumi, Merlo, S., Bhandari, H. B., Kimerling, Lionel C, Agarwal, Abhinandan
অন্যান্য লেখক: Massachusetts Institute of Technology. Department of Materials Science and Engineering
বিন্যাস: প্রবন্ধ
ভাষা:English
প্রকাশিত: Springer Science and Business Media LLC 2021
অনলাইন ব্যবহার করুন:https://hdl.handle.net/1721.1/130396
বিবরন
সংক্ষিপ্ত:We demonstrate thin films of PbSe1−xSx and PbSe1−xTex lead chalcogenide ternary alloys as infrared detectors. The films were deposited on single crystal BaF2 substrates using physical vapor deposition. Detectivity in the wavelength range from 1 μm to 5 μm was measured at −40°C, and all films showed photoresponse signals more than an order of magnitude larger than their noise. The detectivity spectra were used to assess the tunability of the band gap from mixing the lead chalcogenide binaries. The PbSe1−xSx system showed tunability that followed Vegard’s law, while the PbSe1−xTex system showed tunability with a bowing parameter of −0.096 eV. Comparisons to measurements from the literature taken at room temperature suggest that the bowing parameter decreases with decreasing temperature, and the band gap temperature coefficient with respect to composition also shows bowing.