Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices
In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as sy...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2021
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| Online Access: | https://hdl.handle.net/1721.1/130948 |
| _version_ | 1811089700320968704 |
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| author | Rollo, T. Daniel, Luca Esseni, D. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Rollo, T. Daniel, Luca Esseni, D. |
| author_sort | Rollo, T. |
| collection | MIT |
| description | In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as synaptic devices for neuromorphc computing, where the minor loops in ferroelectrics can allow to achieve multiple values of conductance in read mode [3], [4], [5]. Furthermore, the persistence of ferroelectricity in ultra-thin ferroelectric layers paved the way to ferroelectric tunnelling junctions [6], where a polarization dependent tunneling current can be exploited to realize high impedance memristors, amenable for ultra power-efficient and thus massive parallel computation. |
| first_indexed | 2024-09-23T14:23:18Z |
| format | Article |
| id | mit-1721.1/130948 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T14:23:18Z |
| publishDate | 2021 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1309482022-09-29T09:09:41Z Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices Rollo, T. Daniel, Luca Esseni, D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Daniel, Luca In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as synaptic devices for neuromorphc computing, where the minor loops in ferroelectrics can allow to achieve multiple values of conductance in read mode [3], [4], [5]. Furthermore, the persistence of ferroelectricity in ultra-thin ferroelectric layers paved the way to ferroelectric tunnelling junctions [6], where a polarization dependent tunneling current can be exploited to realize high impedance memristors, amenable for ultra power-efficient and thus massive parallel computation. 2021-06-15T20:02:16Z 2021-06-15T20:02:16Z 2019-10 2019-09 Article http://purl.org/eprint/type/ConferencePaper 9781728109404 1946-1577 https://hdl.handle.net/1721.1/130948 Rollo, T. et al. "Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices." 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), September 2019, Udine, Italy, October 2019. © 2019 IEEE http://dx.doi.org/10.1109/sispad.2019.8870373 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Luca Daniel |
| spellingShingle | Rollo, T. Daniel, Luca Esseni, D. Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices |
| title | Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices |
| title_full | Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices |
| title_fullStr | Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices |
| title_full_unstemmed | Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices |
| title_short | Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices |
| title_sort | accurate and efficient dynamic simulations of ferroelectric based electron devices |
| url | https://hdl.handle.net/1721.1/130948 |
| work_keys_str_mv | AT rollot accurateandefficientdynamicsimulationsofferroelectricbasedelectrondevices AT danielluca accurateandefficientdynamicsimulationsofferroelectricbasedelectrondevices AT essenid accurateandefficientdynamicsimulationsofferroelectricbasedelectrondevices |