Accurate and Efficient Dynamic Simulations of Ferroelectric Based Electron Devices
In recent years electron devices based on ferroelectric materials have attracted a lot of interest well beyond FeRAM memories. Negative capacitance transistors (NC-FETs) have been investigated as steep slope transistors [1], [2], and Ferroelectric FETs (Fe-FETs) are under intense scrutiny also as sy...
Main Authors: | Rollo, T., Daniel, Luca, Esseni, D. |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2021
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Online Access: | https://hdl.handle.net/1721.1/130948 |
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