Moving mesh adaptation for Si and GaN-based power device simulation
Abstract In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device si...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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Springer US
2021
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| Online Access: | https://hdl.handle.net/1721.1/131880 |
| _version_ | 1826202332723937280 |
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| author | Ismail, Fawad Sarker, Palash Mohamed, Mohamed Kim, Kyekyoon Ravaioli, Umberto |
| author2 | Massachusetts Institute of Technology. Plasma Science and Fusion Center |
| author_facet | Massachusetts Institute of Technology. Plasma Science and Fusion Center Ismail, Fawad Sarker, Palash Mohamed, Mohamed Kim, Kyekyoon Ravaioli, Umberto |
| author_sort | Ismail, Fawad |
| collection | MIT |
| description | Abstract
In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device simulation is an important problem and can help deal with the convergence and numerical stability issues, as well as automate the meshing process. We demonstrate the efficacy of our proposed meshing scheme through the simulation of a GaN-based power diode, as well as a Si diode with a non-rectangular doping profile, by externally coupling our framework to Sentaurus Device TCAD. We perform error analysis and compare our results with simulations based on high-resolution uniform structured meshes as well as manually refined axis-aligned meshes. In addition to the benefits in terms of accuracy, automation, and generality, our method can be regarded as a stepping stone toward computationally scalable and adaptive semiconductor device simulations. |
| first_indexed | 2024-09-23T12:05:47Z |
| format | Article |
| id | mit-1721.1/131880 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T12:05:47Z |
| publishDate | 2021 |
| publisher | Springer US |
| record_format | dspace |
| spelling | mit-1721.1/1318802023-02-17T17:02:57Z Moving mesh adaptation for Si and GaN-based power device simulation Ismail, Fawad Sarker, Palash Mohamed, Mohamed Kim, Kyekyoon Ravaioli, Umberto Massachusetts Institute of Technology. Plasma Science and Fusion Center Abstract In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device simulation is an important problem and can help deal with the convergence and numerical stability issues, as well as automate the meshing process. We demonstrate the efficacy of our proposed meshing scheme through the simulation of a GaN-based power diode, as well as a Si diode with a non-rectangular doping profile, by externally coupling our framework to Sentaurus Device TCAD. We perform error analysis and compare our results with simulations based on high-resolution uniform structured meshes as well as manually refined axis-aligned meshes. In addition to the benefits in terms of accuracy, automation, and generality, our method can be regarded as a stepping stone toward computationally scalable and adaptive semiconductor device simulations. 2021-09-20T17:30:46Z 2021-09-20T17:30:46Z 2018-07-24 2020-09-24T21:38:28Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/131880 en https://doi.org/10.1007/s10825-018-1218-5 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. Springer Science+Business Media, LLC, part of Springer Nature application/pdf Springer US Springer US |
| spellingShingle | Ismail, Fawad Sarker, Palash Mohamed, Mohamed Kim, Kyekyoon Ravaioli, Umberto Moving mesh adaptation for Si and GaN-based power device simulation |
| title | Moving mesh adaptation for Si and GaN-based power device simulation |
| title_full | Moving mesh adaptation for Si and GaN-based power device simulation |
| title_fullStr | Moving mesh adaptation for Si and GaN-based power device simulation |
| title_full_unstemmed | Moving mesh adaptation for Si and GaN-based power device simulation |
| title_short | Moving mesh adaptation for Si and GaN-based power device simulation |
| title_sort | moving mesh adaptation for si and gan based power device simulation |
| url | https://hdl.handle.net/1721.1/131880 |
| work_keys_str_mv | AT ismailfawad movingmeshadaptationforsiandganbasedpowerdevicesimulation AT sarkerpalash movingmeshadaptationforsiandganbasedpowerdevicesimulation AT mohamedmohamed movingmeshadaptationforsiandganbasedpowerdevicesimulation AT kimkyekyoon movingmeshadaptationforsiandganbasedpowerdevicesimulation AT ravaioliumberto movingmeshadaptationforsiandganbasedpowerdevicesimulation |