Moving mesh adaptation for Si and GaN-based power device simulation

Abstract In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device si...

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Bibliographic Details
Main Authors: Ismail, Fawad, Sarker, Palash, Mohamed, Mohamed, Kim, Kyekyoon, Ravaioli, Umberto
Other Authors: Massachusetts Institute of Technology. Plasma Science and Fusion Center
Format: Article
Language:English
Published: Springer US 2021
Online Access:https://hdl.handle.net/1721.1/131880