Moving mesh adaptation for Si and GaN-based power device simulation
Abstract In this paper, we describe the development of moving mesh adaptation framework and its application to charge transport simulation of semiconductor devices, with emphasis on its relevance to power semiconductor devices. Mesh adaptivity in the context of semiconductor device si...
Main Authors: | Ismail, Fawad, Sarker, Palash, Mohamed, Mohamed, Kim, Kyekyoon, Ravaioli, Umberto |
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Other Authors: | Massachusetts Institute of Technology. Plasma Science and Fusion Center |
Format: | Article |
Language: | English |
Published: |
Springer US
2021
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Online Access: | https://hdl.handle.net/1721.1/131880 |
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