1/f noise in MOSFETs with ultrathin gate dielectrics

1/f noise in MOSFETs with ultrathin gate dielectrics

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1992

Manylion Llyfryddiaeth
Prif Awdur:	Gross, Blaine Jeffrey.
Awduron Eraill:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Fformat:	Traethawd Ymchwil
Cyhoeddwyd:	Massachusetts Institute of Technology 2005
Pynciau:	Electrical Engineering and Computer Science
Mynediad Ar-lein:	http://hdl.handle.net/1721.1/13192

Eitemau Tebyg

Reliability and 1/f noise properties of MOSFETs with nitrided oxide gate dielectrics
gan: Jayaraman, Rajsekhar
Cyhoeddwyd: (2008)

Study of breakdown in ultrathin gate dielectrics in nanoscale MOSFETs
gan: Lo, Vui Lip
Cyhoeddwyd: (2010)

Simulation of post-breakdown transistor performance in ultrathin gate dielectrics-based nanoscale MOSFETs
gan: Yaw, Meng Kwan.
Cyhoeddwyd: (2009)

Study of digital breakdown in pMOSFETs with ultrathin gate dielectric and its significance to reliability assessment
gan: Ashwin Srinivas.
Cyhoeddwyd: (2010)

Characterization of ultrathin gate dielectric films
gan: Leong, Li Ying.
Cyhoeddwyd: (2008)

Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and la-doped HfSiO gate dielectrics
gan: Du, Guoan.
Cyhoeddwyd: (2013)

Physical analysis on ultrathin gate dielectric breakdown using TEM
gan: Tang, Lei Jun
Cyhoeddwyd: (2008)

MOSFET drain current noise modeling with effective gate overdrive and junction noise
gan: Chan, L. H. K., et al.
Cyhoeddwyd: (2013)

Wide band noise in MOSFETs
gan: Wang, Ping
Cyhoeddwyd: (2005)

Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers
gan: Ritenour, Andrew P. (Andrew Paul), 1974-
Cyhoeddwyd: (2008)

X-ray lithographic alignment and overlay applied to double-gate MOSFET fabrication
gan: Meinhold, Mitchell W., 1972-
Cyhoeddwyd: (2005)

Microcontroller based variable gate voltage for MOSFET
gan: Nuripaizail, Ahmad
Cyhoeddwyd: (2008)

Trap-controlled behavior in ultrathin Lu2O3 high-k gate dielectrics
gan: Yuan, C. L., et al.
Cyhoeddwyd: (2013)

Choosing a gate dielectric for graphene based transistors
gan: Hsu, Pei-Lan, M. Eng. Massachusetts Institute of Technology
Cyhoeddwyd: (2009)

Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques
gan: Hashemi, Pouya
Cyhoeddwyd: (2011)

Characterization of 50 nm MOSFET with dielectric pocket
gan: Fauzan, Zul Atfyi, et al.
Cyhoeddwyd: (2007)

Equation defined device modelling of floating gate M.O.S.F.E.Ts.
gan: Cullinan, Michael
Cyhoeddwyd: (2015)

MOSFET noise modeling for wireless applications
gan: Chen, Xuezhong.
Cyhoeddwyd: (2008)

Scaling and numerical simulation analysis of 50 nm MOSFET incorporating dielectric pocket (DP-MOSFET)
gan: M. N., Zul Atfyi Fauzan, et al.
Cyhoeddwyd: (2008)

Measurement and analysis of 1/f noise in uncooled microbolometers
gan: Timpe, Jason T. (Jason Thomas), 1977-
Cyhoeddwyd: (2014)

Compact modeling of gate-all-around silicon nanowire MOSFETs
gan: Lin Shihuan
Cyhoeddwyd: (2012)

Characterization of deep submicron MOSFET with ultra thin gate oxide
gan: Sun, Quan.
Cyhoeddwyd: (2010)

Flicker noise fluctuations in deep submicron MOSFETs
gan: Chew, Johnny Kok Wai
Cyhoeddwyd: (2010)

Effects of small gate length, gate width and s/d overhang on mosfets isolated by STI technology
gan: See, Kwang Seng
Cyhoeddwyd: (2011)

On the 1/f noise of atomic-layer-deposition metal films
gan: Wang, Xiawa
Cyhoeddwyd: (2013)

The link between NBTI and TDDB of high-k gate P-MOSFETs
gan: Gao, Yuan, et al.
Cyhoeddwyd: (2013)

Dual nanowire silicon MOSFET with silicon bridge and TaN gate
gan: Theng, A. L., et al.
Cyhoeddwyd: (2010)

Performance design and simulation analysis of vertical double gate MOSFET (VDGM)
gan: Ismail Saad, et al.
Cyhoeddwyd: (2011)

Design and simulation of 50 nm vertical double-gate MOSFET (VDGM)
gan: Saad, Ismail, et al.
Cyhoeddwyd: (2006)

Electron transport in ultrathin-body fully depleted n-MOSFETS fabricated on strained silicon directly on insulator with body thickness ranging from 22nm to 25 nm
gan: Gomez, Leonardo, Ph. D. Massachusetts Institute of Technology
Cyhoeddwyd: (2007)

Design of a high speed 1/f noise test station
gan: Kuhler, Kent A. (Kent Alan)
Cyhoeddwyd: (2008)

High frequency noise modeling of deep-submicron MOSFETs
gan: Ong, Shih Ni
Cyhoeddwyd: (2015)

High frequency noise in deep-submicrometer silicon mosfets
gan: Su, Hao
Cyhoeddwyd: (2011)

Nanoscale strained-Si/SiGe and double-gate MOSFET modeling
gan: Karthik Chandrasekaran
Cyhoeddwyd: (2010)

Study of dopant redistribution during gate oxide breakdown in narrow MOSFETs
gan: Lim, Wai Tat.
Cyhoeddwyd: (2008)

Experiment Result of High Frequency Switching SiC Mosfet Gate Driver
gan: Kurniawan, Agta Wijaya, et al.
Cyhoeddwyd: (2022)

High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics
gan: Hennessy, John, 1980-
Cyhoeddwyd: (2010)

Effects of cardiac gating on fMRI of the human auditory system
gan: Dykstra, Andrew R. (Andrew Richard)
Cyhoeddwyd: (2009)

Failure mechanisms in HfO2 high-k gate stack MOSFETs
gan: Ranjan Rakesh
Cyhoeddwyd: (2008)

Automated MOSFET parameter extraction
gan: Lui, Jerome C. (Jerome Chun Lung)
Cyhoeddwyd: (2007)