A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems

© 2018 by the authors. Licensee MDPI, Basel, Switzerland. We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The dire...

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Main Authors: Kim, Sang-Hoon, Shin, Hoon, Jeong, Youngkyun, Lee, June-Hee, Choi, Jaehyuk, Chun, Jung-Hoon
Format: Article
Published: 2021
Online Access:https://hdl.handle.net/1721.1/132163
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author Kim, Sang-Hoon
Shin, Hoon
Jeong, Youngkyun
Lee, June-Hee
Choi, Jaehyuk
Chun, Jung-Hoon
author_facet Kim, Sang-Hoon
Shin, Hoon
Jeong, Youngkyun
Lee, June-Hee
Choi, Jaehyuk
Chun, Jung-Hoon
author_sort Kim, Sang-Hoon
collection MIT
description © 2018 by the authors. Licensee MDPI, Basel, Switzerland. We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The direct current (DC)-coupled receiver front-end circuits manage the common-mode level variations and compensate for the channel loss. The tracked oversampling clock and data recovery (CDR), which realizes fast lock acquisition below 1 baud period and low logic latency, is shared by the two channels. Fabricated in a 65-nm low-power complementary metal-oxide semiconductor (CMOS) technology, the dual-channel transceiver achieves 12-Gb/s data rate while the transmitter consumes 20.43 mW from a 1.2-V power supply.
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spelling mit-1721.1/1321632022-03-31T14:31:24Z A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems Kim, Sang-Hoon Shin, Hoon Jeong, Youngkyun Lee, June-Hee Choi, Jaehyuk Chun, Jung-Hoon © 2018 by the authors. Licensee MDPI, Basel, Switzerland. We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The direct current (DC)-coupled receiver front-end circuits manage the common-mode level variations and compensate for the channel loss. The tracked oversampling clock and data recovery (CDR), which realizes fast lock acquisition below 1 baud period and low logic latency, is shared by the two channels. Fabricated in a 65-nm low-power complementary metal-oxide semiconductor (CMOS) technology, the dual-channel transceiver achieves 12-Gb/s data rate while the transmitter consumes 20.43 mW from a 1.2-V power supply. 2021-09-20T18:21:12Z 2021-09-20T18:21:12Z 2019-02-15T15:19:35Z Article http://purl.org/eprint/type/JournalArticle 1424-8220 https://hdl.handle.net/1721.1/132163 Kim, Sang-Hoon, Hoon Shin, Youngkyun Jeong, June-Hee Lee, Jaehyuk Choi, and Jung-Hoon Chun. “A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems.” Sensors 18, no. 8 (August 17, 2018): 2709. doi:10.3390/s18082709. http://dx.doi.org/10.3390/s18082709 Sensors Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf MDPI
spellingShingle Kim, Sang-Hoon
Shin, Hoon
Jeong, Youngkyun
Lee, June-Hee
Choi, Jaehyuk
Chun, Jung-Hoon
A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
title A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
title_full A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
title_fullStr A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
title_full_unstemmed A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
title_short A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
title_sort 12 gb s stacked dual channel interface for cmos image sensor systems
url https://hdl.handle.net/1721.1/132163
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