Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene

Copyright © 2020 American Chemical Society. We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties...

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Main Authors: Pablo-Pedro, Ricardo, Magaña-Fuentes, Miguel Angel, Videa, Marcelo, Kong, Jing, Li, Mingda, Mendoza-Cortes, Jose L, Van Voorhis, Troy
Format: Article
Language:English
Published: American Chemical Society (ACS) 2021
Online Access:https://hdl.handle.net/1721.1/132301
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author Pablo-Pedro, Ricardo
Magaña-Fuentes, Miguel Angel
Videa, Marcelo
Kong, Jing
Li, Mingda
Mendoza-Cortes, Jose L
Van Voorhis, Troy
author_facet Pablo-Pedro, Ricardo
Magaña-Fuentes, Miguel Angel
Videa, Marcelo
Kong, Jing
Li, Mingda
Mendoza-Cortes, Jose L
Van Voorhis, Troy
author_sort Pablo-Pedro, Ricardo
collection MIT
description Copyright © 2020 American Chemical Society. We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties of carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).
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spelling mit-1721.1/1323012021-09-21T03:30:44Z Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene Pablo-Pedro, Ricardo Magaña-Fuentes, Miguel Angel Videa, Marcelo Kong, Jing Li, Mingda Mendoza-Cortes, Jose L Van Voorhis, Troy Copyright © 2020 American Chemical Society. We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon doping using first-principles calculations. For both finite and periodic silicene structures, the electronic properties of carbon-doped monolayers are dramatically changed by controlling the doping sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs). 2021-09-20T18:21:45Z 2021-09-20T18:21:45Z 2021-01-08T18:15:20Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/132301 en 10.1021/ACS.NANOLETT.0C01775 Nano Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf American Chemical Society (ACS) arXiv
spellingShingle Pablo-Pedro, Ricardo
Magaña-Fuentes, Miguel Angel
Videa, Marcelo
Kong, Jing
Li, Mingda
Mendoza-Cortes, Jose L
Van Voorhis, Troy
Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene
title Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene
title_full Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene
title_fullStr Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene
title_full_unstemmed Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene
title_short Understanding Disorder in 2D Materials: The Case of Carbon Doping of Silicene
title_sort understanding disorder in 2d materials the case of carbon doping of silicene
url https://hdl.handle.net/1721.1/132301
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