Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors
© 2020 American Chemical Society. The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport and semiconductor device characterization. Techniques exist for separately measuring temperature (e.g., infrared (IR) mic...
| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado: |
American Chemical Society (ACS)
2021
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| Acceso en liña: | https://hdl.handle.net/1721.1/132581 |
| _version_ | 1826196574885117952 |
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| author | Foy, Christopher Zhang, Lenan Trusheim, Matthew E Bagnall, Kevin R Walsh, Michael Wang, Evelyn N Englund, Dirk R |
| author_facet | Foy, Christopher Zhang, Lenan Trusheim, Matthew E Bagnall, Kevin R Walsh, Michael Wang, Evelyn N Englund, Dirk R |
| author_sort | Foy, Christopher |
| collection | MIT |
| description | © 2020 American Chemical Society. The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport and semiconductor device characterization. Techniques exist for separately measuring temperature (e.g., infrared (IR) microscopy, micro-Raman spectroscopy, and thermo-reflectance microscopy) and magnetic fields (e.g., scanning probe magnetic force microscopy and superconducting quantum interference devices). However, these techniques cannot measure magnetic fields and temperature simultaneously. Here, we use the exceptional temperature and magnetic field sensitivity of nitrogen vacancy (NV) spins in conformally coated nanodiamonds to realize simultaneous wide-field MT imaging at the device level. Our "quantum conformally attached thermo-magnetic"(Q-CAT) imaging enables (i) wide-field, high-frame rate imaging (100-1000 Hz); (ii) high sensitivity; and (iii) compatibility with standard microscopes. We apply this technique to study the industrially important problem of characterizing multifinger gallium nitride high-electron mobility transistors (GaN HEMTs). We spatially and temporally resolve the electric current distribution and resulting temperature rise, elucidating functional device behavior at the microscopic level. The general applicability of Q-CAT imaging serves as an important tool for understanding complex MT phenomena in material science, device physics, and related fields. |
| first_indexed | 2024-09-23T10:29:53Z |
| format | Article |
| id | mit-1721.1/132581 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T10:29:53Z |
| publishDate | 2021 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1325812021-09-21T03:49:30Z Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors Foy, Christopher Zhang, Lenan Trusheim, Matthew E Bagnall, Kevin R Walsh, Michael Wang, Evelyn N Englund, Dirk R © 2020 American Chemical Society. The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport and semiconductor device characterization. Techniques exist for separately measuring temperature (e.g., infrared (IR) microscopy, micro-Raman spectroscopy, and thermo-reflectance microscopy) and magnetic fields (e.g., scanning probe magnetic force microscopy and superconducting quantum interference devices). However, these techniques cannot measure magnetic fields and temperature simultaneously. Here, we use the exceptional temperature and magnetic field sensitivity of nitrogen vacancy (NV) spins in conformally coated nanodiamonds to realize simultaneous wide-field MT imaging at the device level. Our "quantum conformally attached thermo-magnetic"(Q-CAT) imaging enables (i) wide-field, high-frame rate imaging (100-1000 Hz); (ii) high sensitivity; and (iii) compatibility with standard microscopes. We apply this technique to study the industrially important problem of characterizing multifinger gallium nitride high-electron mobility transistors (GaN HEMTs). We spatially and temporally resolve the electric current distribution and resulting temperature rise, elucidating functional device behavior at the microscopic level. The general applicability of Q-CAT imaging serves as an important tool for understanding complex MT phenomena in material science, device physics, and related fields. 2021-09-20T18:23:10Z 2021-09-20T18:23:10Z 2020-11-13T13:40:20Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/132581 en 10.1021/ACSAMI.0C01545 ACS Applied Materials & Interfaces Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf American Chemical Society (ACS) arXiv |
| spellingShingle | Foy, Christopher Zhang, Lenan Trusheim, Matthew E Bagnall, Kevin R Walsh, Michael Wang, Evelyn N Englund, Dirk R Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors |
| title | Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors |
| title_full | Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors |
| title_fullStr | Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors |
| title_full_unstemmed | Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors |
| title_short | Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors |
| title_sort | wide field magnetic field and temperature imaging using nanoscale quantum sensors |
| url | https://hdl.handle.net/1721.1/132581 |
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