Excess Off-State Current in InGaAs FinFETs
We present a detailed study of the off-state leakage current in scaled self-aligned InGaAs FinFETs. In long-channel devices, band-to-band tunneling at the drain-end of the channel is shown to be the root cause of excessive off-state current. This conclusion emerges from its characteristic electric f...
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| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2021
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| Online Access: | https://hdl.handle.net/1721.1/132950 |