Orbital Equivalence of Terrestrial Radiation Tolerance Experiments
© 1963-2012 IEEE. High-energy (>40 MeV) protons are commonly used to characterize radiation tolerance of space electronics against damage caused by energy transfer to the nuclei and electrons of semiconductor materials while in orbit. While practically useful, these experiments are unrepresentati...
Main Authors: | Logan, Julie V, Short, Michael P, Webster, Preston T, Morath, Christian P |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering |
Format: | Article |
Language: | English |
Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2021
|
Online Access: | https://hdl.handle.net/1721.1/133215 |
Similar Items
-
Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory
by: Logan, Julie V, et al.
Published: (2023) -
Impact of proton-induced transmutation doping in semiconductors for space applications
by: Logan, Julie V., et al.
Published: (2020) -
Potential for neutron and proton transmutation doping of GaN and Ga 2 O 3
by: Logan, Julie V, et al.
Published: (2021) -
Uncovering the fundamental driver of semiconductor radiation tolerance
by: Logan, Julie V.
Published: (2022) -
More accurate parameterization of positron implantation depth profiles for the sensitivity range of positron-based characterization techniques
by: Logan, Julie V., et al.
Published: (2021)