Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi
© 2019 American Physical Society. Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous H...
| Автори: | , , , , , , , , , , , , |
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| Інші автори: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
American Physical Society (APS)
2021
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| Онлайн доступ: | https://hdl.handle.net/1721.1/133419 |
| _version_ | 1826210937232687104 |
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| author | Lyu, Yang-Yang Han, Fei Xiao, Zhi-Li Xu, Jing Wang, Yong-Lei Wang, Hua-Bing Bao, Jin-Ke Chung, Duck Young Li, Mingda Martin, Ivar Welp, Ulrich Kanatzidis, Mercouri G Kwok, Wai-Kwong |
| author2 | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering Lyu, Yang-Yang Han, Fei Xiao, Zhi-Li Xu, Jing Wang, Yong-Lei Wang, Hua-Bing Bao, Jin-Ke Chung, Duck Young Li, Mingda Martin, Ivar Welp, Ulrich Kanatzidis, Mercouri G Kwok, Wai-Kwong |
| author_sort | Lyu, Yang-Yang |
| collection | MIT |
| description | © 2019 American Physical Society. Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous Hall effect. Here, we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4f electrons and exhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field. The results reveal the strong interaction between conduction electrons and magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals. |
| first_indexed | 2024-09-23T14:57:49Z |
| format | Article |
| id | mit-1721.1/133419 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:57:49Z |
| publishDate | 2021 |
| publisher | American Physical Society (APS) |
| record_format | dspace |
| spelling | mit-1721.1/1334192023-02-24T19:15:46Z Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi Lyu, Yang-Yang Han, Fei Xiao, Zhi-Li Xu, Jing Wang, Yong-Lei Wang, Hua-Bing Bao, Jin-Ke Chung, Duck Young Li, Mingda Martin, Ivar Welp, Ulrich Kanatzidis, Mercouri G Kwok, Wai-Kwong Massachusetts Institute of Technology. Department of Nuclear Science and Engineering © 2019 American Physical Society. Magnetic topological semimetals, the latest member of topological quantum materials, are attracting extensive attention as they may lead to topologically driven spintronics. Currently, magnetotransport investigations on these materials are focused on the anomalous Hall effect. Here, we report on the magnetoresistance anisotropy of topological semimetal CeBi, which has tunable magnetic structures arising from localized Ce 4f electrons and exhibits both negative and positive magnetoresistances, depending on the temperature. We found that the angle dependence of the negative magnetoresistance, regardless of its large variation with the magnitude of the magnetic field and with temperature, is solely dictated by the field-induced magnetization that is orientated along a primary crystalline axis and flops under the influence of a rotating magnetic field. The results reveal the strong interaction between conduction electrons and magnetization in CeBi. They also indicate that magnetoresistance anisotropy can be used to uncover the magnetic behavior and the correlation between transport phenomena and magnetism in magnetic topological semimetals. 2021-10-27T19:52:46Z 2021-10-27T19:52:46Z 2019 2021-08-11T16:40:24Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/133419 en 10.1103/PHYSREVB.100.180407 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society (APS) APS |
| spellingShingle | Lyu, Yang-Yang Han, Fei Xiao, Zhi-Li Xu, Jing Wang, Yong-Lei Wang, Hua-Bing Bao, Jin-Ke Chung, Duck Young Li, Mingda Martin, Ivar Welp, Ulrich Kanatzidis, Mercouri G Kwok, Wai-Kwong Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi |
| title | Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi |
| title_full | Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi |
| title_fullStr | Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi |
| title_full_unstemmed | Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi |
| title_short | Magnetization-governed magnetoresistance anisotropy in the topological semimetal CeBi |
| title_sort | magnetization governed magnetoresistance anisotropy in the topological semimetal cebi |
| url | https://hdl.handle.net/1721.1/133419 |
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