Reduction of in-plane field required for spin-orbit torque magnetization reversal by insertion of Au spacer in Pt/Au/Co/Ni/Co/Ta

© 2017 Author(s). Spin-orbit torques and current-induced switching are studied in perpendicularly magnetized Pt/Au/(Co/Ni/Co) films as a function of Au insertion layer thickness tAu. By simultaneously varying the ferromagnet layer thickness, a parametric series of samples with nearly constant anisot...

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Bibliographic Details
Main Authors: Mann, Maxwell, Beach, Geoffrey
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: AIP Publishing 2022
Online Access:https://hdl.handle.net/1721.1/134684.2
Description
Summary:© 2017 Author(s). Spin-orbit torques and current-induced switching are studied in perpendicularly magnetized Pt/Au/(Co/Ni/Co) films as a function of Au insertion layer thickness tAu. By simultaneously varying the ferromagnet layer thickness, a parametric series of samples with nearly constant anisotropy were prepared. On this series, spin orbit torques were characterized by harmonic voltage and hysteresis loop shift measurements, and current-induced switching was examined as a function of the in-plane bias field. Little variation is seen for tAu < 0.5 nm, whereas for tAu > 0.5 nm, a series of well-correlated effects appear. Both the loop shift efficiency and the Slonczewski-like spin-orbit torque effective field double, while the in-plane field required to saturate the loop shift efficiency decreases by a factor of ∼10. Correspondingly, the current and in-plane field required for spin-orbit torque switching are reduced by about 90%. These results suggest that a thin Au insertion layer reduces the Dzyaloshinskii-Moriya interaction strength and improves spin transmission at the spin Hall metal/ferromagnet interface, substantially reducing the in-plane field and currents for spin orbit torque switching.