Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique
© 2017 Author(s). Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typical...
| Main Authors: | , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing
2021
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| Online Access: | https://hdl.handle.net/1721.1/134690 |
| _version_ | 1826212007251017728 |
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| author | Monmeyran, Corentin Crowe, Iain F Gwilliam, Russell M Heidelberger, Christopher Napolitani, Enrico Pastor, David Gandhi, Hemi H Mazur, Eric Michel, Jürgen Agarwal, Anuradha M Kimerling, Lionel C |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Monmeyran, Corentin Crowe, Iain F Gwilliam, Russell M Heidelberger, Christopher Napolitani, Enrico Pastor, David Gandhi, Hemi H Mazur, Eric Michel, Jürgen Agarwal, Anuradha M Kimerling, Lionel C |
| author_sort | Monmeyran, Corentin |
| collection | MIT |
| description | © 2017 Author(s). Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors. |
| first_indexed | 2024-09-23T15:15:00Z |
| format | Article |
| id | mit-1721.1/134690 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:15:00Z |
| publishDate | 2021 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1346902023-03-01T21:01:48Z Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique Monmeyran, Corentin Crowe, Iain F Gwilliam, Russell M Heidelberger, Christopher Napolitani, Enrico Pastor, David Gandhi, Hemi H Mazur, Eric Michel, Jürgen Agarwal, Anuradha M Kimerling, Lionel C Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center © 2017 Author(s). Co-doping with fluorine is a potentially promising method for defect passivation to increase the donor electrical activation in highly doped n-type germanium. However, regular high dose donor-fluorine co-implants, followed by conventional thermal treatment of the germanium, typically result in a dramatic loss of the fluorine, as a result of the extremely large diffusivity at elevated temperatures, partly mediated by the solid phase epitaxial regrowth. To circumvent this problem, we propose and experimentally demonstrate two non-amorphizing co-implantation methods; one involving consecutive, low dose fluorine implants, intertwined with rapid thermal annealing and the second, involving heating of the target wafer during implantation. Our study confirms that the fluorine solubility in germanium is defect-mediated and we reveal the extent to which both of these strategies can be effective in retaining large fractions of both the implanted fluorine and, critically, phosphorus donors. 2021-10-27T20:08:41Z 2021-10-27T20:08:41Z 2018 2019-09-20T18:26:08Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/134690 en 10.1063/1.4999210 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf AIP Publishing Other repository |
| spellingShingle | Monmeyran, Corentin Crowe, Iain F Gwilliam, Russell M Heidelberger, Christopher Napolitani, Enrico Pastor, David Gandhi, Hemi H Mazur, Eric Michel, Jürgen Agarwal, Anuradha M Kimerling, Lionel C Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique |
| title | Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique |
| title_full | Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique |
| title_fullStr | Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique |
| title_full_unstemmed | Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique |
| title_short | Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique |
| title_sort | improved retention of phosphorus donors in germanium using a non amorphizing fluorine co implantation technique |
| url | https://hdl.handle.net/1721.1/134690 |
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