Magneto-ionic control of magnetism using a solid-state proton pump
© 2018, The Author(s), under exclusive licence to Springer Nature Limited. Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O 2− displacement to modulate ma...
| Main Authors: | , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Springer Science and Business Media LLC
2021
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| Online Access: | https://hdl.handle.net/1721.1/134755 |
| _version_ | 1811077777166696448 |
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| author | Tan, Aik Jun Huang, Mantao Avci, Can Onur Büttner, Felix Mann, Maxwell Hu, Wen Mazzoli, Claudio Wilkins, Stuart Tuller, Harry L Beach, Geoffrey SD |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Tan, Aik Jun Huang, Mantao Avci, Can Onur Büttner, Felix Mann, Maxwell Hu, Wen Mazzoli, Claudio Wilkins, Stuart Tuller, Harry L Beach, Geoffrey SD |
| author_sort | Tan, Aik Jun |
| collection | MIT |
| description | © 2018, The Author(s), under exclusive licence to Springer Nature Limited. Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O 2− displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H + pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H + insertion at a Co/GdO x interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal–metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin–orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii–Moriya interaction, and spin–orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin–orbitronics. |
| first_indexed | 2024-09-23T10:48:12Z |
| format | Article |
| id | mit-1721.1/134755 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T10:48:12Z |
| publishDate | 2021 |
| publisher | Springer Science and Business Media LLC |
| record_format | dspace |
| spelling | mit-1721.1/1347552023-03-01T15:34:27Z Magneto-ionic control of magnetism using a solid-state proton pump Tan, Aik Jun Huang, Mantao Avci, Can Onur Büttner, Felix Mann, Maxwell Hu, Wen Mazzoli, Claudio Wilkins, Stuart Tuller, Harry L Beach, Geoffrey SD Massachusetts Institute of Technology. Department of Materials Science and Engineering © 2018, The Author(s), under exclusive licence to Springer Nature Limited. Voltage-gated ion transport as a means of manipulating magnetism electrically could enable ultralow-power memory, logic and sensor technologies. Earlier work made use of electric-field-driven O 2− displacement to modulate magnetism in thin films by controlling interfacial or bulk oxidation states. However, elevated temperatures are required and chemical and structural changes lead to irreversibility and device degradation. Here we show reversible and non-destructive toggling of magnetic anisotropy at room temperature using a small gate voltage through H + pumping in all-solid-state heterostructures. We achieve 90° magnetization switching by H + insertion at a Co/GdO x interface, with no degradation in magnetic properties after >2,000 cycles. We then demonstrate reversible anisotropy gating by hydrogen loading in Pd/Co/Pd heterostructures, making metal–metal interfaces susceptible to voltage control. The hydrogen storage metals Pd and Pt are high spin–orbit coupling materials commonly used to generate perpendicular magnetic anisotropy, Dzyaloshinskii–Moriya interaction, and spin–orbit torques in ferromagnet/heavy-metal heterostructures. Thus, our work provides a platform for voltage-controlled spin–orbitronics. 2021-10-27T20:08:59Z 2021-10-27T20:08:59Z 2019 2019-09-16T18:41:25Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/134755 en 10.1038/S41563-018-0211-5 Nature Materials Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Springer Science and Business Media LLC MIT web domain |
| spellingShingle | Tan, Aik Jun Huang, Mantao Avci, Can Onur Büttner, Felix Mann, Maxwell Hu, Wen Mazzoli, Claudio Wilkins, Stuart Tuller, Harry L Beach, Geoffrey SD Magneto-ionic control of magnetism using a solid-state proton pump |
| title | Magneto-ionic control of magnetism using a solid-state proton pump |
| title_full | Magneto-ionic control of magnetism using a solid-state proton pump |
| title_fullStr | Magneto-ionic control of magnetism using a solid-state proton pump |
| title_full_unstemmed | Magneto-ionic control of magnetism using a solid-state proton pump |
| title_short | Magneto-ionic control of magnetism using a solid-state proton pump |
| title_sort | magneto ionic control of magnetism using a solid state proton pump |
| url | https://hdl.handle.net/1721.1/134755 |
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