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1826217848663441408
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MIT
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© 2018 Elsevier Ltd Recent progress in the electronic quality of high-performance (HP) multicrystalline silicon material is reported with measurements and modeling performed at various institutions and research groups. It is shown that recent progress has been made in the fabrication at Trina Solar mainly by improving the high excess carrier lifetimes τ due to a considerable reduction of mid-gap states. However, the high lifetimes in the wafers are still reduced by interstitial iron by a factor of about 10 at maximum power point (mpp) conditions compared to mono-crystalline Cz wafers of equivalent resistivity. The low lifetime areas of the wafers seem to be limited by precipitates, most likely Cu. Through simulations, it appears that dislocations reduce cell efficiency by about 0.25% absolute. The best predictors for PERC cell efficiency from ingot metrology are a combination of mean lifetime and dislocation density because dislocations cannot be improved considerably by gettering during cell processing, while lifetime-limiting impurities are gettered well. In future, the material may limit cell efficiency above about 22.5% if the concentrations of Fe and Cu remain above 1010 and 1013 cm−3, respectively, and if dislocations are not reduced further.
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2024-09-23T17:10:08Z
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Article
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mit-1721.1/134889
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Massachusetts Institute of Technology
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| language |
English
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2024-09-23T17:10:08Z
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| publishDate |
2021
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Elsevier BV
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dspace
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| spelling |
mit-1721.1/1348892021-10-28T03:01:26Z High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells © 2018 Elsevier Ltd Recent progress in the electronic quality of high-performance (HP) multicrystalline silicon material is reported with measurements and modeling performed at various institutions and research groups. It is shown that recent progress has been made in the fabrication at Trina Solar mainly by improving the high excess carrier lifetimes τ due to a considerable reduction of mid-gap states. However, the high lifetimes in the wafers are still reduced by interstitial iron by a factor of about 10 at maximum power point (mpp) conditions compared to mono-crystalline Cz wafers of equivalent resistivity. The low lifetime areas of the wafers seem to be limited by precipitates, most likely Cu. Through simulations, it appears that dislocations reduce cell efficiency by about 0.25% absolute. The best predictors for PERC cell efficiency from ingot metrology are a combination of mean lifetime and dislocation density because dislocations cannot be improved considerably by gettering during cell processing, while lifetime-limiting impurities are gettered well. In future, the material may limit cell efficiency above about 22.5% if the concentrations of Fe and Cu remain above 1010 and 1013 cm−3, respectively, and if dislocations are not reduced further. 2021-10-27T20:09:41Z 2021-10-27T20:09:41Z 2018 2020-06-24T18:00:19Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/134889 en 10.1016/J.SOLENER.2018.01.073 Solar Energy Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Elsevier BV other univ website
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| spellingShingle |
High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells
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| title |
High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells
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| title_full |
High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells
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| title_fullStr |
High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells
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| title_full_unstemmed |
High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells
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| title_short |
High-performance p-type multicrystalline silicon (mc-Si): Its characterization and projected performance in PERC solar cells
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| title_sort |
high performance p type multicrystalline silicon mc si its characterization and projected performance in perc solar cells
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| url |
https://hdl.handle.net/1721.1/134889
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