High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator
© 2018 Chinese Laser Press. High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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The Optical Society
2021
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| Online Access: | https://hdl.handle.net/1721.1/134958 |
| _version_ | 1826207769090326528 |
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| author | Wang, Yue Wang, Bing Sasangka, Wardhana A Bao, Shuyu Zhang, Yiping Demir, Hilmi Volkan Michel, Jurgen Lee, Kenneth Eng Kian Yoon, Soon Fatt Fitzgerald, Eugene A Tan, Chuan Seng Lee, Kwang Hong |
| author2 | Singapore-MIT Alliance in Research and Technology (SMART) |
| author_facet | Singapore-MIT Alliance in Research and Technology (SMART) Wang, Yue Wang, Bing Sasangka, Wardhana A Bao, Shuyu Zhang, Yiping Demir, Hilmi Volkan Michel, Jurgen Lee, Kenneth Eng Kian Yoon, Soon Fatt Fitzgerald, Eugene A Tan, Chuan Seng Lee, Kwang Hong |
| author_sort | Wang, Yue |
| collection | MIT |
| description | © 2018 Chinese Laser Press. High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer processes on 200 mm wafers. With O2 annealing, the TDD of the GOI substrate can be reduced to ∼1.2 ×106 cm−2. LEDs fabricated on this GOI substrate exhibit record-high optical output power of 1.3 mW at a 670 nm peak wavelength under 280 mA current injection. This output power level is at least 2 times higher compared to other reports of similar devices on a silicon (Si) substrate without degrading the electrical performance. These results demonstrate great promise for the monolithic integration of visible-band optical sources with Si-based electronic circuitry and realization of high-density RGB (red, green, and blue) micro-LED arrays with control circuitry. |
| first_indexed | 2024-09-23T13:54:39Z |
| format | Article |
| id | mit-1721.1/134958 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T13:54:39Z |
| publishDate | 2021 |
| publisher | The Optical Society |
| record_format | dspace |
| spelling | mit-1721.1/1349582023-02-23T16:54:42Z High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Wang, Yue Wang, Bing Sasangka, Wardhana A Bao, Shuyu Zhang, Yiping Demir, Hilmi Volkan Michel, Jurgen Lee, Kenneth Eng Kian Yoon, Soon Fatt Fitzgerald, Eugene A Tan, Chuan Seng Lee, Kwang Hong Singapore-MIT Alliance in Research and Technology (SMART) Massachusetts Institute of Technology. Department of Materials Science and Engineering © 2018 Chinese Laser Press. High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer bonding, and layer transfer processes on 200 mm wafers. With O2 annealing, the TDD of the GOI substrate can be reduced to ∼1.2 ×106 cm−2. LEDs fabricated on this GOI substrate exhibit record-high optical output power of 1.3 mW at a 670 nm peak wavelength under 280 mA current injection. This output power level is at least 2 times higher compared to other reports of similar devices on a silicon (Si) substrate without degrading the electrical performance. These results demonstrate great promise for the monolithic integration of visible-band optical sources with Si-based electronic circuitry and realization of high-density RGB (red, green, and blue) micro-LED arrays with control circuitry. 2021-10-27T20:10:03Z 2021-10-27T20:10:03Z 2018 2019-09-18T17:24:04Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/134958 en 10.1364/PRJ.6.000290 Photonics Research Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf The Optical Society OSA Publishing |
| spellingShingle | Wang, Yue Wang, Bing Sasangka, Wardhana A Bao, Shuyu Zhang, Yiping Demir, Hilmi Volkan Michel, Jurgen Lee, Kenneth Eng Kian Yoon, Soon Fatt Fitzgerald, Eugene A Tan, Chuan Seng Lee, Kwang Hong High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator |
| title | High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator |
| title_full | High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator |
| title_fullStr | High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator |
| title_full_unstemmed | High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator |
| title_short | High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator |
| title_sort | high performance algainp light emitting diodes integrated on silicon through a superior quality germanium on insulator |
| url | https://hdl.handle.net/1721.1/134958 |
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