High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator

© 2018 Chinese Laser Press. High-performance GaInP/AlGaInP multi-quantum well light-emitting diodes (LEDs) grown on a low threading dislocation density (TDD) germanium-on-insulator (GOI) substrate have been demonstrated. The low TDD of the GOI substrate is realized through Ge epitaxial growth, wafer...

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Bibliografski detalji
Glavni autori: Wang, Yue, Wang, Bing, Sasangka, Wardhana A, Bao, Shuyu, Zhang, Yiping, Demir, Hilmi Volkan, Michel, Jurgen, Lee, Kenneth Eng Kian, Yoon, Soon Fatt, Fitzgerald, Eugene A, Tan, Chuan Seng, Lee, Kwang Hong
Daljnji autori: Singapore-MIT Alliance in Research and Technology (SMART)
Format: Članak
Jezik:English
Izdano: The Optical Society 2021
Online pristup:https://hdl.handle.net/1721.1/134958

Internet

https://hdl.handle.net/1721.1/134958

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