Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2

Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS 2

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© 2018 American Chemical Society. High-energy irradiation of materials can lead to void formation due to the aggregation of vacancies, reducing the local stress in the system. Studying void formation and its interplay with vacancy clusters in bulk materials at the atomic level has been challenging d...

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Bibliographic Details
Main Authors:	Chen, Qu, Li, Huashan, Zhou, Si, Xu, Wenshuo, Chen, Jun, Sawada, Hidetaka, Allen, Christopher S, Kirkland, Angus I, Grossman, Jeffrey C, Warner, Jamie H
Format:	Article
Language:	English
Published:	American Chemical Society (ACS) 2021
Online Access:	https://hdl.handle.net/1721.1/135804

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