Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications
© 2018 American Chemical Society. Nanoscale pore formation on chemical vapor deposition grown monolayer MoS2 is achieved using oxygen plasma etching through a nanoporous silicon mask, creating round pores of â70 nm in diameter. The microscale areas with high porosity were successfully patterned via...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society (ACS)
2021
|
| Online Access: | https://hdl.handle.net/1721.1/136358 |
| _version_ | 1826205238375219200 |
|---|---|
| author | Han, Grace GD Smith, Brendan D Xu, Wenshuo Warner, Jamie H Grossman, Jeffrey C |
| author_facet | Han, Grace GD Smith, Brendan D Xu, Wenshuo Warner, Jamie H Grossman, Jeffrey C |
| author_sort | Han, Grace GD |
| collection | MIT |
| description | © 2018 American Chemical Society. Nanoscale pore formation on chemical vapor deposition grown monolayer MoS2 is achieved using oxygen plasma etching through a nanoporous silicon mask, creating round pores of â70 nm in diameter. The microscale areas with high porosity were successfully patterned via the usage of silicon masks. Thermal annealing in air after the pore formation in the monolayers results in the gradual enlargement of the pores, providing an effective method of controlling edge-to-area ratio of MoS2 crystals. The photoluminescence of the nanoporous MoS2 exhibits rapid increase and blue-shift due to facile p-doping during the thermal annealing process compared to pristine MoS2. This method of fabricating porous transition metal dichalcogenide layers with controlled edge densities presents opportunities in various applications that require atomically thin nanomaterials with controlled pore density and edge sites, such as filtration, electrocatalysis, and sensing. |
| first_indexed | 2024-09-23T13:09:51Z |
| format | Article |
| id | mit-1721.1/136358 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T13:09:51Z |
| publishDate | 2021 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1363582022-03-30T14:46:46Z Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications Han, Grace GD Smith, Brendan D Xu, Wenshuo Warner, Jamie H Grossman, Jeffrey C © 2018 American Chemical Society. Nanoscale pore formation on chemical vapor deposition grown monolayer MoS2 is achieved using oxygen plasma etching through a nanoporous silicon mask, creating round pores of â70 nm in diameter. The microscale areas with high porosity were successfully patterned via the usage of silicon masks. Thermal annealing in air after the pore formation in the monolayers results in the gradual enlargement of the pores, providing an effective method of controlling edge-to-area ratio of MoS2 crystals. The photoluminescence of the nanoporous MoS2 exhibits rapid increase and blue-shift due to facile p-doping during the thermal annealing process compared to pristine MoS2. This method of fabricating porous transition metal dichalcogenide layers with controlled edge densities presents opportunities in various applications that require atomically thin nanomaterials with controlled pore density and edge sites, such as filtration, electrocatalysis, and sensing. 2021-10-27T20:35:01Z 2021-10-27T20:35:01Z 2018 2019-09-19T13:59:19Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/136358 en 10.1021/ACSANM.8B00707 ACS Applied Nano Materials Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) MIT web domain |
| spellingShingle | Han, Grace GD Smith, Brendan D Xu, Wenshuo Warner, Jamie H Grossman, Jeffrey C Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications |
| title | Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications |
| title_full | Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications |
| title_fullStr | Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications |
| title_full_unstemmed | Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications |
| title_short | Nanoporous Silicon-Assisted Patterning of Monolayer MoS 2 with Thermally Controlled Porosity: A Scalable Method for Diverse Applications |
| title_sort | nanoporous silicon assisted patterning of monolayer mos 2 with thermally controlled porosity a scalable method for diverse applications |
| url | https://hdl.handle.net/1721.1/136358 |
| work_keys_str_mv | AT hangracegd nanoporoussiliconassistedpatterningofmonolayermos2withthermallycontrolledporosityascalablemethodfordiverseapplications AT smithbrendand nanoporoussiliconassistedpatterningofmonolayermos2withthermallycontrolledporosityascalablemethodfordiverseapplications AT xuwenshuo nanoporoussiliconassistedpatterningofmonolayermos2withthermallycontrolledporosityascalablemethodfordiverseapplications AT warnerjamieh nanoporoussiliconassistedpatterningofmonolayermos2withthermallycontrolledporosityascalablemethodfordiverseapplications AT grossmanjeffreyc nanoporoussiliconassistedpatterningofmonolayermos2withthermallycontrolledporosityascalablemethodfordiverseapplications |