Remembrance of Transistors Past
In this paper, we propose a novel MOSFET parameter extraction method to enable early technology evaluation. The distinguishing feature of the proposed method is that it enables the extraction of an entire set of MOSFET model parameters using limited and incomplete IV measurements from on-chip monito...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
ACM Press
2021
|
| Online Access: | https://hdl.handle.net/1721.1/137447 |
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