Filling the terahertz gap with sand: High-power terahertz radiators in silicon

© 2015 IEEE. This paper reviews our recent work on Si and SiGe THz sources that generate high-power coherent radiation. Our design approach blends the optimization of device operation near or above fmax with unconventional circuit topologies and energy-efficient electromagnetic structures. Using a 1...

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Үндсэн зохиолчид: Han, Ruonan, Afshari, Ehsan
Формат: Өгүүллэг
Хэл сонгох:English
Хэвлэсэн: IEEE 2021
Онлайн хандалт:https://hdl.handle.net/1721.1/137638
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author Han, Ruonan
Afshari, Ehsan
author_facet Han, Ruonan
Afshari, Ehsan
author_sort Han, Ruonan
collection MIT
description © 2015 IEEE. This paper reviews our recent work on Si and SiGe THz sources that generate high-power coherent radiation. Our design approach blends the optimization of device operation near or above fmax with unconventional circuit topologies and energy-efficient electromagnetic structures. Using a 130-nm SiGe HBT process (fmax=3D280 GHz), our 320-GHz transmitter produces a record radiated power (3.3 mW) and DC-to-THz radiation efficiency (0.54%) among all THz signal sources in silicon. This transmitter also demonstrates fully-integrated phase-locking capability for THz radiators for the first time. In this paper, a 260-GHz pulse radiator and a 340-GHz phased array, which are based on a 65-nm bulk CMOS process, are also presented. The former generates a radiated power of 1.1 mW, and provides THz pulses with 25-GHz bandwidth. The latter generates a radiated power of 0.8 mW and has a 50° beam-steering capability. These works demonstrate a promising roadmap towards future THz microsystems using silicon integrated-circuit technologies.
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spelling mit-1721.1/1376382021-11-09T03:36:22Z Filling the terahertz gap with sand: High-power terahertz radiators in silicon Han, Ruonan Afshari, Ehsan © 2015 IEEE. This paper reviews our recent work on Si and SiGe THz sources that generate high-power coherent radiation. Our design approach blends the optimization of device operation near or above fmax with unconventional circuit topologies and energy-efficient electromagnetic structures. Using a 130-nm SiGe HBT process (fmax=3D280 GHz), our 320-GHz transmitter produces a record radiated power (3.3 mW) and DC-to-THz radiation efficiency (0.54%) among all THz signal sources in silicon. This transmitter also demonstrates fully-integrated phase-locking capability for THz radiators for the first time. In this paper, a 260-GHz pulse radiator and a 340-GHz phased array, which are based on a 65-nm bulk CMOS process, are also presented. The former generates a radiated power of 1.1 mW, and provides THz pulses with 25-GHz bandwidth. The latter generates a radiated power of 0.8 mW and has a 50° beam-steering capability. These works demonstrate a promising roadmap towards future THz microsystems using silicon integrated-circuit technologies. 2021-11-08T12:51:53Z 2021-11-08T12:51:53Z 2015-10 2019-05-30T17:36:26Z Article http://purl.org/eprint/type/ConferencePaper https://hdl.handle.net/1721.1/137638 Han, Ruonan and Afshari, Ehsan. 2015. "Filling the terahertz gap with sand: High-power terahertz radiators in silicon." en 10.1109/bctm.2015.7340574 Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf IEEE MIT web domain
spellingShingle Han, Ruonan
Afshari, Ehsan
Filling the terahertz gap with sand: High-power terahertz radiators in silicon
title Filling the terahertz gap with sand: High-power terahertz radiators in silicon
title_full Filling the terahertz gap with sand: High-power terahertz radiators in silicon
title_fullStr Filling the terahertz gap with sand: High-power terahertz radiators in silicon
title_full_unstemmed Filling the terahertz gap with sand: High-power terahertz radiators in silicon
title_short Filling the terahertz gap with sand: High-power terahertz radiators in silicon
title_sort filling the terahertz gap with sand high power terahertz radiators in silicon
url https://hdl.handle.net/1721.1/137638
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