Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study
Exciton (strong electron-hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled excit...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Walter de Gruyter GmbH
2021
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| Online Access: | https://hdl.handle.net/1721.1/138747 |
| _version_ | 1811091293897490432 |
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| author | Ramazani, Ali Shayeganfar, Farzaneh Jalilian, Jaafar Fang, Nicholas X |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Ramazani, Ali Shayeganfar, Farzaneh Jalilian, Jaafar Fang, Nicholas X |
| author_sort | Ramazani, Ali |
| collection | MIT |
| description | Exciton (strong electron-hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron-phonon and electron-electron (e-e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information. |
| first_indexed | 2024-09-23T15:00:13Z |
| format | Article |
| id | mit-1721.1/138747 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:00:13Z |
| publishDate | 2021 |
| publisher | Walter de Gruyter GmbH |
| record_format | dspace |
| spelling | mit-1721.1/1387472023-02-10T21:13:11Z Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study Ramazani, Ali Shayeganfar, Farzaneh Jalilian, Jaafar Fang, Nicholas X Massachusetts Institute of Technology. Department of Mechanical Engineering Exciton (strong electron-hole interactions) and hot carriers (HCs) assisted by surface plasmon polaritons show promise to enhance the photoresponse of nanoelectronic and optoelectronic devices. In the current research, we develop a computational quantum framework to study the effect of coupled exciton and HCs on the photovoltaic energy distribution, scattering process, polarizability, and light emission of two-dimensional (2D) semiconductors. Using a stable 2D semiconductor (semihydrogenated SiB) as our example, we theoretically show that external strain and thermal effect on the SiB can lead to valley polarized plasmon quasiparticles and HC generation. Our results reveal that the electron-phonon and electron-electron (e-e) interactions characterize the correlation between the decay rate, scattering of excitons, and generation of HCs in 2D semiconductors. Moreover, phonon assisted luminescence spectra of SiB suggest that light emission can be enhanced by increasing strain and temperature. The polarized plasmon with strong coupling of electronic and photonics states in SiB makes it as a promising candidate for light harvesting, plasmonic photocurrent devices, and quantum information. 2021-12-20T19:29:05Z 2021-12-20T19:29:05Z 2020 2021-12-20T19:26:59Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/138747 Ramazani, Ali, Shayeganfar, Farzaneh, Jalilian, Jaafar and Fang, Nicholas X. 2020. "Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study." Nanophotonics, 9 (2). en 10.1515/NANOPH-2019-0363 Nanophotonics Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf Walter de Gruyter GmbH De Gruyter |
| spellingShingle | Ramazani, Ali Shayeganfar, Farzaneh Jalilian, Jaafar Fang, Nicholas X Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_full | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_fullStr | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_full_unstemmed | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_short | Exciton-plasmon polariton coupling and hot carrier generation in two-dimensional SiB semiconductors: a first-principles study |
| title_sort | exciton plasmon polariton coupling and hot carrier generation in two dimensional sib semiconductors a first principles study |
| url | https://hdl.handle.net/1721.1/138747 |
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