Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application
© 2020 Author(s). We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing
2022
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| Online Access: | https://hdl.handle.net/1721.1/138805 |
| _version_ | 1826210338810363904 |
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| author | Schulte, Kevin L France, Ryan M Friedman, Daniel J LaPotin, Alina D Henry, Asegun Steiner, Myles A |
| author_facet | Schulte, Kevin L France, Ryan M Friedman, Daniel J LaPotin, Alina D Henry, Asegun Steiner, Myles A |
| author_sort | Schulte, Kevin L |
| collection | MIT |
| description | © 2020 Author(s). We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ∼30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%. |
| first_indexed | 2024-09-23T14:48:13Z |
| format | Article |
| id | mit-1721.1/138805 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:48:13Z |
| publishDate | 2022 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/1388052022-01-05T03:09:36Z Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application Schulte, Kevin L France, Ryan M Friedman, Daniel J LaPotin, Alina D Henry, Asegun Steiner, Myles A © 2020 Author(s). We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ∼30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%. 2022-01-04T19:09:20Z 2022-01-04T19:09:20Z 2020 2022-01-04T19:06:45Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/138805 Schulte, Kevin L, France, Ryan M, Friedman, Daniel J, LaPotin, Alina D, Henry, Asegun et al. 2020. "Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application." Journal of Applied Physics, 128 (14). en 10.1063/5.0024029 Journal of Applied Physics Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf AIP Publishing DOE repository |
| spellingShingle | Schulte, Kevin L France, Ryan M Friedman, Daniel J LaPotin, Alina D Henry, Asegun Steiner, Myles A Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| title | Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| title_full | Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| title_fullStr | Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| title_full_unstemmed | Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| title_short | Inverted metamorphic AlGaInAs/GaInAs tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| title_sort | inverted metamorphic algainas gainas tandem thermophotovoltaic cell designed for thermal energy grid storage application |
| url | https://hdl.handle.net/1721.1/138805 |
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