Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN

Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN

The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by employing ultrathin Al2O3 at the interface, has shown the feasibility to overcome the poor p-type doping challenge of GaN. However, the surface band-bending of GaN that could be influenced by the Al2O3 has been unkn...

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Detalles Bibliográficos
Autores principales: Gong, Jiarui, Lu, Kuangye, Kim, Jisoo, Ng, TienKhee, Kim, Donghyeok, Zhou, Jie, Liu, Dong, Kim, Jeehwan, Ooi, Boon S, Ma, Zhenqiang
Otros Autores: Massachusetts Institute of Technology. Department of Mechanical Engineering
Formato: Artículo
Lenguaje:English
Publicado: IOP Publishing 2022
Acceso en línea:https://hdl.handle.net/1721.1/138840

Internet

https://hdl.handle.net/1721.1/138840

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