Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus
Among layered and 2D semiconductors, there are many with substantial opticalanisotropy within individual layers, including group-IV monochalcogenidesMX(M¼Ge or Sn andX¼S or Se) and black phosphorous (bP). Recent work hassuggested that the in-plane crystal orientation in such materials can be switche...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022
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| Online Access: | https://hdl.handle.net/1721.1/139809 |
| _version_ | 1811094972679585792 |
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| author | Jo, Seong Soon Wu, Changming Zhu, Linghan Yang, Li Li, Mo Jaramillo, Rafael |
| author_facet | Jo, Seong Soon Wu, Changming Zhu, Linghan Yang, Li Li, Mo Jaramillo, Rafael |
| author_sort | Jo, Seong Soon |
| collection | MIT |
| description | Among layered and 2D semiconductors, there are many with substantial opticalanisotropy within individual layers, including group-IV monochalcogenidesMX(M¼Ge or Sn andX¼S or Se) and black phosphorous (bP). Recent work hassuggested that the in-plane crystal orientation in such materials can be switched(e.g., rotated through 90 ) through an ultrafast, displacive (i.e., nondiffusive),nonthermal, and lower-power mechanism by strong electricfields, due toin-plane dielectric anisotropy. In theory, this represents a new mechanism forlight-controlling-light in photonic integrated circuits (PICs). Herein, numericaldevice modeling is used to study device concepts based on switching the crystalorientation of SnSe and bP in PICs. Ring resonators and 1 2 switches withresonant conditions that change with the in-plane crystal orientations SnSe andbP are simulated. The results are broadly applicable to 2D materials with fer-roelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.RESEARCH ARTICLEwww.adpr-journal.comAdv. Photonics Res.2021,2, 21001762100176 (1 of 6)© 2021 The Authors. Advanced Photonics Research published by Wiley-VCH GmbH |
| first_indexed | 2024-09-23T16:08:11Z |
| format | Article |
| id | mit-1721.1/139809 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T16:08:11Z |
| publishDate | 2022 |
| publisher | Wiley |
| record_format | dspace |
| spelling | mit-1721.1/1398092022-01-31T18:34:00Z Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus Jo, Seong Soon Wu, Changming Zhu, Linghan Yang, Li Li, Mo Jaramillo, Rafael Among layered and 2D semiconductors, there are many with substantial opticalanisotropy within individual layers, including group-IV monochalcogenidesMX(M¼Ge or Sn andX¼S or Se) and black phosphorous (bP). Recent work hassuggested that the in-plane crystal orientation in such materials can be switched(e.g., rotated through 90 ) through an ultrafast, displacive (i.e., nondiffusive),nonthermal, and lower-power mechanism by strong electricfields, due toin-plane dielectric anisotropy. In theory, this represents a new mechanism forlight-controlling-light in photonic integrated circuits (PICs). Herein, numericaldevice modeling is used to study device concepts based on switching the crystalorientation of SnSe and bP in PICs. Ring resonators and 1 2 switches withresonant conditions that change with the in-plane crystal orientations SnSe andbP are simulated. The results are broadly applicable to 2D materials with fer-roelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.RESEARCH ARTICLEwww.adpr-journal.comAdv. Photonics Res.2021,2, 21001762100176 (1 of 6)© 2021 The Authors. Advanced Photonics Research published by Wiley-VCH GmbH 2022-01-31T18:33:59Z 2022-01-31T18:33:59Z 2021 2022-01-31T18:21:02Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/139809 Jo, Seong Soon, Wu, Changming, Zhu, Linghan, Yang, Li, Li, Mo et al. 2021. "Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus." Advanced Photonics Research, 2 (12). en 10.1002/ADPR.202100176 Advanced Photonics Research Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf Wiley Wiley |
| spellingShingle | Jo, Seong Soon Wu, Changming Zhu, Linghan Yang, Li Li, Mo Jaramillo, Rafael Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_full | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_fullStr | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_full_unstemmed | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_short | Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus |
| title_sort | photonic platforms using in plane optical anisotropy of tin ii selenide and black phosphorus |
| url | https://hdl.handle.net/1721.1/139809 |
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