The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy

The device applications and characterization of nonstoichiometric GaAs grown by molecular beam epitaxy

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1990.

Bibliographic Details
Main Author: Smith, Frank William
Other Authors: Alan L. McWhorter.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2005
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/14039

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