High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds
Thermal management is of vital importance in various modern technologies such as portable electronics, photovoltaics, and thermoelectric devices. Impeding phonon transport remains one of the most challenging tasks for improving the thermoelectric performance of certain materials such as half-Heusler...
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| Format: | Article |
| Language: | English |
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Wiley
2022
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| Online Access: | https://hdl.handle.net/1721.1/141268 |
| _version_ | 1826193273023102976 |
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| author | He, Ran Zhu, Taishan Ying, Pingjun Chen, Jie Giebeler, Lars Kühn, Uta Grossman, Jeffrey C Wang, Yumei Nielsch, Kornelius |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering He, Ran Zhu, Taishan Ying, Pingjun Chen, Jie Giebeler, Lars Kühn, Uta Grossman, Jeffrey C Wang, Yumei Nielsch, Kornelius |
| author_sort | He, Ran |
| collection | MIT |
| description | Thermal management is of vital importance in various modern technologies such as portable electronics, photovoltaics, and thermoelectric devices. Impeding phonon transport remains one of the most challenging tasks for improving the thermoelectric performance of certain materials such as half-Heusler compounds. Herein, a significant reduction of lattice thermal conductivity (κL ) is achieved by applying a pressure of ≈1 GPa to sinter a broad range of half-Heusler compounds. Contrasting with the common sintering pressure of less than 100 MPa, the gigapascal-level pressure enables densification at a lower temperature, thus greatly modifying the structural characteristics for an intensified phonon scattering. A maximum κL reduction of ≈83% is realized for HfCoSb from 14 to 2.5 W m-1 K-1 at 300 K with more than 95% relative density. The realized low κL originates from a remarkable grain-size refinement to below 100 nm together with the abundant in-grain defects, as determined by microscopy investigations. This work uncovers the phonon transport properties of half-Heusler compounds under unconventional microstructures, thus showing the potential of high-pressure compaction in advancing the performance of thermoelectric materials. |
| first_indexed | 2024-09-23T09:36:24Z |
| format | Article |
| id | mit-1721.1/141268 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T09:36:24Z |
| publishDate | 2022 |
| publisher | Wiley |
| record_format | dspace |
| spelling | mit-1721.1/1412682023-02-01T21:34:49Z High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds He, Ran Zhu, Taishan Ying, Pingjun Chen, Jie Giebeler, Lars Kühn, Uta Grossman, Jeffrey C Wang, Yumei Nielsch, Kornelius Massachusetts Institute of Technology. Department of Materials Science and Engineering Thermal management is of vital importance in various modern technologies such as portable electronics, photovoltaics, and thermoelectric devices. Impeding phonon transport remains one of the most challenging tasks for improving the thermoelectric performance of certain materials such as half-Heusler compounds. Herein, a significant reduction of lattice thermal conductivity (κL ) is achieved by applying a pressure of ≈1 GPa to sinter a broad range of half-Heusler compounds. Contrasting with the common sintering pressure of less than 100 MPa, the gigapascal-level pressure enables densification at a lower temperature, thus greatly modifying the structural characteristics for an intensified phonon scattering. A maximum κL reduction of ≈83% is realized for HfCoSb from 14 to 2.5 W m-1 K-1 at 300 K with more than 95% relative density. The realized low κL originates from a remarkable grain-size refinement to below 100 nm together with the abundant in-grain defects, as determined by microscopy investigations. This work uncovers the phonon transport properties of half-Heusler compounds under unconventional microstructures, thus showing the potential of high-pressure compaction in advancing the performance of thermoelectric materials. 2022-03-17T19:18:51Z 2022-03-17T19:18:51Z 2021 2022-03-17T19:16:13Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/141268 He, Ran, Zhu, Taishan, Ying, Pingjun, Chen, Jie, Giebeler, Lars et al. 2021. "High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds." Small, 17 (33). en 10.1002/SMLL.202102045 Small Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Wiley Wiley |
| spellingShingle | He, Ran Zhu, Taishan Ying, Pingjun Chen, Jie Giebeler, Lars Kühn, Uta Grossman, Jeffrey C Wang, Yumei Nielsch, Kornelius High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds |
| title | High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds |
| title_full | High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds |
| title_fullStr | High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds |
| title_full_unstemmed | High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds |
| title_short | High‐Pressure‐Sintering‐Induced Microstructural Engineering for an Ultimate Phonon Scattering of Thermoelectric Half‐Heusler Compounds |
| title_sort | high pressure sintering induced microstructural engineering for an ultimate phonon scattering of thermoelectric half heusler compounds |
| url | https://hdl.handle.net/1721.1/141268 |
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