Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System

We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from o...

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Detalles Bibliográficos
Autores principales: Demir, Ahmet, Staley, Neal, Aronson, Samuel, Tomarken, Spencer, West, Ken, Baldwin, Kirk, Pfeiffer, Loren, Ashoori, Raymond
Otros Autores: Massachusetts Institute of Technology. Department of Physics
Formato: Artículo
Lenguaje:English
Publicado: American Physical Society (APS) 2022
Acceso en línea:https://hdl.handle.net/1721.1/141422
Descripción
Sumario:We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν=2 to ν=5 in selective probing of the edge states of the dot: (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν=5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors.