Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System
We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from o...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society (APS)
2022
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| Online Access: | https://hdl.handle.net/1721.1/141422 |
| _version_ | 1811070202636402688 |
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| author | Demir, Ahmet Staley, Neal Aronson, Samuel Tomarken, Spencer West, Ken Baldwin, Kirk Pfeiffer, Loren Ashoori, Raymond |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics Demir, Ahmet Staley, Neal Aronson, Samuel Tomarken, Spencer West, Ken Baldwin, Kirk Pfeiffer, Loren Ashoori, Raymond |
| author_sort | Demir, Ahmet |
| collection | MIT |
| description | We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν=2 to ν=5 in selective probing of the edge states of the dot: (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν=5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors. |
| first_indexed | 2024-09-23T08:31:55Z |
| format | Article |
| id | mit-1721.1/141422 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T08:31:55Z |
| publishDate | 2022 |
| publisher | American Physical Society (APS) |
| record_format | dspace |
| spelling | mit-1721.1/1414222023-01-30T21:06:38Z Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System Demir, Ahmet Staley, Neal Aronson, Samuel Tomarken, Spencer West, Ken Baldwin, Kirk Pfeiffer, Loren Ashoori, Raymond Massachusetts Institute of Technology. Department of Physics We create laterally large and low-disorder GaAs quantum-well-based quantum dots that act as small two-dimensional electron systems. We monitor tunneling of single electrons to the dots by means of capacitance measurements and identify single-electron capacitance peaks in the addition spectrum from occupancies of one up to thousands of electrons. The data show two remarkable phenomena in the Landau level filling factor range ν=2 to ν=5 in selective probing of the edge states of the dot: (i) Coulomb blockade peaks arise from the entrance of two electrons rather than one; (ii) at and near ν=5/2 and at fixed gate voltage, these double-height peaks appear uniformly in a magnetic field with a flux periodicity of h/2e, but they group into pairs at other filling factors. 2022-03-30T18:07:45Z 2022-03-30T18:07:45Z 2021 2022-03-30T18:04:35Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/141422 Demir, Ahmet, Staley, Neal, Aronson, Samuel, Tomarken, Spencer, West, Ken et al. 2021. "Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System." Physical Review Letters, 126 (25). en 10.1103/PHYSREVLETT.126.256802 Physical Review Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society (APS) APS |
| spellingShingle | Demir, Ahmet Staley, Neal Aronson, Samuel Tomarken, Spencer West, Ken Baldwin, Kirk Pfeiffer, Loren Ashoori, Raymond Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System |
| title | Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System |
| title_full | Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System |
| title_fullStr | Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System |
| title_full_unstemmed | Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System |
| title_short | Correlated Double-Electron Additions at the Edge of a Two-Dimensional Electronic System |
| title_sort | correlated double electron additions at the edge of a two dimensional electronic system |
| url | https://hdl.handle.net/1721.1/141422 |
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