Quantum frequency doubling in the topological insulator Bi2Se3
© 2021, The Author(s). The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 u...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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Springer Science and Business Media LLC
2022
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| Online Access: | https://hdl.handle.net/1721.1/141848 |
| _version_ | 1826210181016453120 |
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| author | He, Pan Isobe, Hiroki Zhu, Dapeng Hsu, Chuang-Han Fu, Liang Yang, Hyunsoo |
| author2 | Massachusetts Institute of Technology. Department of Physics |
| author_facet | Massachusetts Institute of Technology. Department of Physics He, Pan Isobe, Hiroki Zhu, Dapeng Hsu, Chuang-Han Fu, Liang Yang, Hyunsoo |
| author_sort | He, Pan |
| collection | MIT |
| description | © 2021, The Author(s). The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit. |
| first_indexed | 2024-09-23T14:45:12Z |
| format | Article |
| id | mit-1721.1/141848 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T14:45:12Z |
| publishDate | 2022 |
| publisher | Springer Science and Business Media LLC |
| record_format | dspace |
| spelling | mit-1721.1/1418482023-02-10T21:07:30Z Quantum frequency doubling in the topological insulator Bi2Se3 He, Pan Isobe, Hiroki Zhu, Dapeng Hsu, Chuang-Han Fu, Liang Yang, Hyunsoo Massachusetts Institute of Technology. Department of Physics © 2021, The Author(s). The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit. 2022-04-12T12:57:37Z 2022-04-12T12:57:37Z 2021 2022-04-12T12:53:29Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/141848 He, Pan, Isobe, Hiroki, Zhu, Dapeng, Hsu, Chuang-Han, Fu, Liang et al. 2021. "Quantum frequency doubling in the topological insulator Bi2Se3." Nature Communications, 12 (1). en 10.1038/S41467-021-20983-1 Nature Communications Creative Commons Attribution 4.0 International license https://creativecommons.org/licenses/by/4.0/ application/pdf Springer Science and Business Media LLC Nature |
| spellingShingle | He, Pan Isobe, Hiroki Zhu, Dapeng Hsu, Chuang-Han Fu, Liang Yang, Hyunsoo Quantum frequency doubling in the topological insulator Bi2Se3 |
| title | Quantum frequency doubling in the topological insulator Bi2Se3 |
| title_full | Quantum frequency doubling in the topological insulator Bi2Se3 |
| title_fullStr | Quantum frequency doubling in the topological insulator Bi2Se3 |
| title_full_unstemmed | Quantum frequency doubling in the topological insulator Bi2Se3 |
| title_short | Quantum frequency doubling in the topological insulator Bi2Se3 |
| title_sort | quantum frequency doubling in the topological insulator bi2se3 |
| url | https://hdl.handle.net/1721.1/141848 |
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