Wet-based digital etching on GaN and AlGaN

Wet-based digital etching on GaN and AlGaN

Department of Defense (DoD)

Bibliographic Details
Main Authors: Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan, Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Published: AIP Publishing 2022
Subjects:
Physics and Astronomy (miscellaneous)
Online Access:https://hdl.handle.net/1721.1/141928
Description
Summary:Department of Defense (DoD)

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