Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

Department of Defense (DoD)

Bibliographic Details
Main Authors: Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I., Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2022
Subjects:
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Online Access:https://hdl.handle.net/1721.1/141929
Description
Summary:Department of Defense (DoD)

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