Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

Department of Defense (DoD)

Bibliographic Details
Main Authors: Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I., Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2022
Subjects:
Online Access:https://hdl.handle.net/1721.1/141929
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author Shih, Pao-Chuan
Rughoobur, Girish
Cheng, Kai
Akinwande, Akintunde I.
Palacios, Tomas
author2 Massachusetts Institute of Technology. Microsystems Technology Laboratories
author_facet Massachusetts Institute of Technology. Microsystems Technology Laboratories
Shih, Pao-Chuan
Rughoobur, Girish
Cheng, Kai
Akinwande, Akintunde I.
Palacios, Tomas
author_sort Shih, Pao-Chuan
collection MIT
description Department of Defense (DoD)
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institution Massachusetts Institute of Technology
last_indexed 2024-09-23T16:08:50Z
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publisher Institute of Electrical and Electronics Engineers (IEEE)
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spelling mit-1721.1/1419292023-01-10T15:46:35Z Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process Shih, Pao-Chuan Rughoobur, Girish Cheng, Kai Akinwande, Akintunde I. Palacios, Tomas Massachusetts Institute of Technology. Microsystems Technology Laboratories Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Department of Defense (DoD) 2022-04-19T15:43:28Z 2022-04-19T15:43:28Z 2021-03 Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/141929 Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I. and Palacios, Tomas. 2021. "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process." IEEE Electron Device Letters, 42 (3). 10.1109/LED.2021.3052715 10.1109/led.2021.3052715 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Pao-Chuan Shih
spellingShingle Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Shih, Pao-Chuan
Rughoobur, Girish
Cheng, Kai
Akinwande, Akintunde I.
Palacios, Tomas
Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
title Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
title_full Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
title_fullStr Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
title_full_unstemmed Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
title_short Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process
title_sort self align gated gan field emitter arrays sharpened by a digital etching process
topic Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
url https://hdl.handle.net/1721.1/141929
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AT rughooburgirish selfaligngatedganfieldemitterarrayssharpenedbyadigitaletchingprocess
AT chengkai selfaligngatedganfieldemitterarrayssharpenedbyadigitaletchingprocess
AT akinwandeakintundei selfaligngatedganfieldemitterarrayssharpenedbyadigitaletchingprocess
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