High spectro-temporal compression on a nonlinear CMOS-chip
<jats:title>Abstract</jats:title><jats:p>Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology, high speed optical communications and attos...
| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
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Springer Science and Business Media LLC
2022
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| Online Access: | https://hdl.handle.net/1721.1/142576 |
| _version_ | 1826193380817764352 |
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| author | Choi, Ju Won Sahin, Ezgi Sohn, Byoung-Uk Chen, George FR Ng, Doris KT Agarwal, Anuradha M Kimerling, Lionel C Tan, Dawn TH |
| author2 | SUTD-MIT International Design Centre (IDC) |
| author_facet | SUTD-MIT International Design Centre (IDC) Choi, Ju Won Sahin, Ezgi Sohn, Byoung-Uk Chen, George FR Ng, Doris KT Agarwal, Anuradha M Kimerling, Lionel C Tan, Dawn TH |
| author_sort | Choi, Ju Won |
| collection | MIT |
| description | <jats:title>Abstract</jats:title><jats:p>Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology, high speed optical communications and attosecond science. Here, we report 11× temporal compression of 5.8 ps pulses to 0.55 ps using a low power of 13.3 W. The result is accompanied by a significant increase in the pulse peak power by 9.4×. These results represent the strongest temporal compression demonstrated to date on a complementary metal–oxide–semiconductor (CMOS) chip. In addition, we report the first demonstration of on-chip spectral compression, 3.0× spectral compression of 480 fs pulses, importantly while preserving the pulse energy. The strong compression achieved at low powers harnesses advanced on-chip device design, and the strong nonlinear properties of backend-CMOS compatible ultra-silicon-rich nitride, which possesses absence of two-photon absorption and 500× larger nonlinear parameter than in stoichiometric silicon nitride waveguides. The demonstrated work introduces an important new paradigm for spectro-temporal compression of optical pulses toward turn-key, on-chip integrated systems for all-optical pulse control.</jats:p> |
| first_indexed | 2024-09-23T09:38:29Z |
| format | Article |
| id | mit-1721.1/142576 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T09:38:29Z |
| publishDate | 2022 |
| publisher | Springer Science and Business Media LLC |
| record_format | dspace |
| spelling | mit-1721.1/1425762023-04-20T14:43:59Z High spectro-temporal compression on a nonlinear CMOS-chip Choi, Ju Won Sahin, Ezgi Sohn, Byoung-Uk Chen, George FR Ng, Doris KT Agarwal, Anuradha M Kimerling, Lionel C Tan, Dawn TH SUTD-MIT International Design Centre (IDC) Massachusetts Institute of Technology. Microphotonics Center MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering <jats:title>Abstract</jats:title><jats:p>Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology, high speed optical communications and attosecond science. Here, we report 11× temporal compression of 5.8 ps pulses to 0.55 ps using a low power of 13.3 W. The result is accompanied by a significant increase in the pulse peak power by 9.4×. These results represent the strongest temporal compression demonstrated to date on a complementary metal–oxide–semiconductor (CMOS) chip. In addition, we report the first demonstration of on-chip spectral compression, 3.0× spectral compression of 480 fs pulses, importantly while preserving the pulse energy. The strong compression achieved at low powers harnesses advanced on-chip device design, and the strong nonlinear properties of backend-CMOS compatible ultra-silicon-rich nitride, which possesses absence of two-photon absorption and 500× larger nonlinear parameter than in stoichiometric silicon nitride waveguides. The demonstrated work introduces an important new paradigm for spectro-temporal compression of optical pulses toward turn-key, on-chip integrated systems for all-optical pulse control.</jats:p> 2022-05-18T15:22:52Z 2022-05-18T15:22:52Z 2021 2022-05-18T13:43:07Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/142576 Choi, Ju Won, Sahin, Ezgi, Sohn, Byoung-Uk, Chen, George FR, Ng, Doris KT et al. 2021. "High spectro-temporal compression on a nonlinear CMOS-chip." Light: Science & Applications, 10 (1). en 10.1038/S41377-021-00572-Z Light: Science & Applications Creative Commons Attribution 4.0 International License https://creativecommons.org/licenses/by/4.0 application/pdf Springer Science and Business Media LLC Nature |
| spellingShingle | Choi, Ju Won Sahin, Ezgi Sohn, Byoung-Uk Chen, George FR Ng, Doris KT Agarwal, Anuradha M Kimerling, Lionel C Tan, Dawn TH High spectro-temporal compression on a nonlinear CMOS-chip |
| title | High spectro-temporal compression on a nonlinear CMOS-chip |
| title_full | High spectro-temporal compression on a nonlinear CMOS-chip |
| title_fullStr | High spectro-temporal compression on a nonlinear CMOS-chip |
| title_full_unstemmed | High spectro-temporal compression on a nonlinear CMOS-chip |
| title_short | High spectro-temporal compression on a nonlinear CMOS-chip |
| title_sort | high spectro temporal compression on a nonlinear cmos chip |
| url | https://hdl.handle.net/1721.1/142576 |
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