Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex loads
In this work, we report the use of commercial gallium nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors. This was accomplished by taking advantage of the small form-factor, low-power dissipation, and high temperature compatibility o...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing
2022
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| Online Access: | https://hdl.handle.net/1721.1/142783 |