Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution
Raman microscopy with resolution below the diffraction limit is demonstrated on sub-surface nanostructures. Unlike most other modalities for nanoscale measurements, our approach is able to image nanostructures buried several microns below the sample surface while still extracting details about the c...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
The Optical Society
2022
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| Online Access: | https://hdl.handle.net/1721.1/143850 |
| _version_ | 1826213310133960704 |
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| author | Li, Zheng Persits, Nili Gray, Dodd J Ram, Rajeev J |
| author2 | Massachusetts Institute of Technology. Research Laboratory of Electronics |
| author_facet | Massachusetts Institute of Technology. Research Laboratory of Electronics Li, Zheng Persits, Nili Gray, Dodd J Ram, Rajeev J |
| author_sort | Li, Zheng |
| collection | MIT |
| description | Raman microscopy with resolution below the diffraction limit is demonstrated on sub-surface nanostructures. Unlike most other modalities for nanoscale measurements, our approach is able to image nanostructures buried several microns below the sample surface while still extracting details about the chemistry, strain, and temperature of the nanostructures. In this work, we demonstrate that combining polarized Raman microscopy adjusted to optimize edge enhancement effects and nanostructure contrast with fast computational deconvolution methods can improve the spatial resolution while preserving the flexibility of Raman microscopy. The cosine transform method demonstrated here enables significant computational speed-up from O(N3) to O(Nlog N) - resulting in computation times that are significantly below the image acquisition time. CMOS poly-Si nanostructures buried below 0.3 - 6 µm of complex dielectrics are used to quantify the performance of the instrument and the algorithm. The relative errors of the feature sizes, the relative chemical concentrations and the fill factors of the deconvoluted images are all approximately 10% compared with the ground truth. For the smallest poly-Si feature of 230 nm, the absolute error is approximately 25 nm. |
| first_indexed | 2024-09-23T15:47:22Z |
| format | Article |
| id | mit-1721.1/143850 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:47:22Z |
| publishDate | 2022 |
| publisher | The Optical Society |
| record_format | dspace |
| spelling | mit-1721.1/1438502023-02-10T20:08:49Z Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution Li, Zheng Persits, Nili Gray, Dodd J Ram, Rajeev J Massachusetts Institute of Technology. Research Laboratory of Electronics Raman microscopy with resolution below the diffraction limit is demonstrated on sub-surface nanostructures. Unlike most other modalities for nanoscale measurements, our approach is able to image nanostructures buried several microns below the sample surface while still extracting details about the chemistry, strain, and temperature of the nanostructures. In this work, we demonstrate that combining polarized Raman microscopy adjusted to optimize edge enhancement effects and nanostructure contrast with fast computational deconvolution methods can improve the spatial resolution while preserving the flexibility of Raman microscopy. The cosine transform method demonstrated here enables significant computational speed-up from O(N3) to O(Nlog N) - resulting in computation times that are significantly below the image acquisition time. CMOS poly-Si nanostructures buried below 0.3 - 6 µm of complex dielectrics are used to quantify the performance of the instrument and the algorithm. The relative errors of the feature sizes, the relative chemical concentrations and the fill factors of the deconvoluted images are all approximately 10% compared with the ground truth. For the smallest poly-Si feature of 230 nm, the absolute error is approximately 25 nm. 2022-07-19T13:54:07Z 2022-07-19T13:54:07Z 2021 2022-07-19T13:31:33Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/143850 Li, Zheng, Persits, Nili, Gray, Dodd J and Ram, Rajeev J. 2021. "Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution." Optics Express, 29 (23). en 10.1364/OE.443665 Optics Express Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf The Optical Society Optica Publishing Group |
| spellingShingle | Li, Zheng Persits, Nili Gray, Dodd J Ram, Rajeev J Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution |
| title | Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution |
| title_full | Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution |
| title_fullStr | Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution |
| title_full_unstemmed | Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution |
| title_short | Computational polarized Raman microscopy on sub-surface nanostructures with sub-diffraction-limit resolution |
| title_sort | computational polarized raman microscopy on sub surface nanostructures with sub diffraction limit resolution |
| url | https://hdl.handle.net/1721.1/143850 |
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