Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices

Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices

Bibliographic Details
Main Authors:	Tan, Zheng Jie, Somjit, Vrindaa, Toparli, Cigdem, Yildiz, Bilge, Fang, Nicholas
Other Authors:	Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Format:	Article
Language:	English
Published:	American Physical Society (APS) 2023
Online Access:	https://hdl.handle.net/1721.1/147710

Similar Items

Doping α-Al2O3 to reduce its hydrogen permeability: thermodynamic assessment of hydrogen defects and solubility from first principles
by: Somjit, Vrindaa, et al.
Published: (2020)

Hydrogen in aluminum oxide and at the aluminum oxide/aluminum interface: an ab initio thermodynamics and Monte Carlo investigation
by: Somjit, Vrindaa
Published: (2023)

Resistance switching of BST thin films
by: Zhuo, Karen Jie Fang.
Published: (2011)

Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications
by: Fang, Zheng
Published: (2013)

Sericin for resistance switching device with multilevel nonvolatile memory
by: Wang, Hong, et al.
Published: (2014)

Resistive switching devices based on halide perovskites
by: Cheong, Cheng Hao
Published: (2020)

Resistive switching devices based on halide perovskites
by: Yeo, Derek Kai Wen
Published: (2020)

Resistive switching memory devices based on proteins
by: Wang, Hong, et al.
Published: (2015)

Electronegative electroretinogram in the modern multimodal imaging era
by: Sakti, Dhimas H., et al.
Published: (2022)

Alcohol-Mediated Resistance-Switching Behavior in Metal–Organic Framework-Based Electronic Devices
by: Liu, Yaqing, et al.
Published: (2017)

Organic ferroelectric memory devices based on resistive switching
by: Damar Yoga Kusuma
Published: (2013)

Symmetrical negative differential resistance behavior of a resistive switching device
by: Du, Yuanmin, et al.
Published: (2013)

Effect of crystal orientation on the segregation of aliovalent dopants at the surface of La₀.₆Sr₀.₄CoO₃
by: Piskin, Fatih, et al.
Published: (2018)

Precipitation of dopants on acceptor-doped LaMnO 3±δ revealed by defect chemistry from first principles
by: Hess, Franziska, et al.
Published: (2021)

Electronegativity-induced charge balancing to boost stability and activity of amorphous electrocatalysts
by: Zhou, Yao, et al.
Published: (2022)

Design of Single-Switch Inverters for Variable Resistance/Load Modulation Operation
by: Roslaniec, Lukasz, et al.
Published: (2015)

Nonvolatile resistive switching in metal oxides for the application in resistive random access memory
by: Peng, Haiyang
Published: (2014)

Effects of electrode material and configuration on the characteristics of planar resistive switching devices
by: Cha, Dongkyu, et al.
Published: (2014)

Analysis of thermodynamic resistive switching in ZnO-based RRAM device
by: Bature, Usman Isyaku, et al.
Published: (2023)

Anatomy of resistive switching behavior in titanium oxide based RRAM device
by: Yang, K, et al.
Published: (2022)

Simultaneous implementation of resistive switching and rectifying effects in a metal-organic framework with switched hydrogen bond pathway
by: Yao, Zizhu, et al.
Published: (2020)

Cation deficiency enables reversal of dopant segregation at perovskite oxide surfaces under anodic potential
by: Kim, Dongha, et al.
Published: (2023)

Three-terminal resistive switch based on metal/metal oxide redox reactions
by: Huang, Mantao, et al.
Published: (2017)

Resistive switching in metal-oxide-metal structures for non-volatile memory application
by: Zhang, Yu.
Published: (2012)

Intrinsic nanofilamentation in resistive switching
by: Migas, Dmitri B., et al.
Published: (2014)

Editorial for the JECR special issue on resistive switching: Oxide materials, mechanisms, and devices
by: Valov, Ilia, et al.
Published: (2018)

Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
by: Wang, Wei, et al.
Published: (2019)

Conduction mechanisms in Ti/HfOx/Pt resistive switching memory device
by: Tan, Kuan Hong
Published: (2020)

Configurable resistive switching between memory and threshold characteristics for protein-based devices
by: Wang, Hong, et al.
Published: (2015)

Investigations of interfacial engineering on MgO-based resistive switching memory devices
by: Chow, Samuel Chen Wai
Published: (2023)

Realization of transient memory-loss with NiO-based resistive switching device
by: Hu, S. G., et al.
Published: (2013)

Switch magnetic field device study
by: Chng, Calvin Chee Meng.
Published: (2011)

Experimental verification of Boltzmann equilibrium for negative ions in weakly collisional electronegative plasmas
by: Ghim Kim, Y, et al.
Published: (2009)

Light-enabled resistive memory switching
by: Law, Madeline Su Ling
Published: (2016)

Transport properties of HfO2−x based resistive-switching memories
by: Wang, Zhongrui, et al.
Published: (2013)

Switch on, switch off: stiction in nanoelectromechanical switches
by: Wagner, T, et al.
Published: (2013)

Conduction mechanisms on high retention annealed mgo-based resistive switching memory devices
by: Loy, Desmond Jia Jun, et al.
Published: (2019)

Flexible nanoscale memory device based on resistive switching in nickel oxide thin film
by: Yu, Q., et al.
Published: (2013)

Metal vapor vacuum arc switching
by: Cope, David Banks
Published: (2006)

Flexoelectric surface switching of bistable nematic devices
by: Denniston, C, et al.
Published: (2001)