Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework
Metal-organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energ...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2023
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| Online Access: | https://hdl.handle.net/1721.1/148009 |
| _version_ | 1811076114684051456 |
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| author | Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N Stassen, Ivo Hendon, Christopher H Dincă, Mircea |
| author2 | Massachusetts Institute of Technology. Department of Chemistry |
| author_facet | Massachusetts Institute of Technology. Department of Chemistry Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N Stassen, Ivo Hendon, Christopher H Dincă, Mircea |
| author_sort | Skorupskii, Grigorii |
| collection | MIT |
| description | Metal-organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state-in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2 /g, comparable to transition metal analogs. |
| first_indexed | 2024-09-23T10:16:19Z |
| format | Article |
| id | mit-1721.1/148009 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T10:16:19Z |
| publishDate | 2023 |
| publisher | Wiley |
| record_format | dspace |
| spelling | mit-1721.1/1480092023-02-11T03:39:37Z Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N Stassen, Ivo Hendon, Christopher H Dincă, Mircea Massachusetts Institute of Technology. Department of Chemistry Metal-organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state-in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2 /g, comparable to transition metal analogs. 2023-02-10T15:23:12Z 2023-02-10T15:23:12Z 2022 2023-02-10T15:13:37Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/148009 Skorupskii, Grigorii, Chanteux, Géraldine, Le, Khoa N, Stassen, Ivo, Hendon, Christopher H et al. 2022. "Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework." Annals of the New York Academy of Sciences, 1518 (1). en 10.1111/NYAS.14906 Annals of the New York Academy of Sciences Creative Commons Attribution-NonCommercial-NoDerivs License http://creativecommons.org/licenses/by-nc-nd/4.0/ application/pdf Wiley Wiley |
| spellingShingle | Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N Stassen, Ivo Hendon, Christopher H Dincă, Mircea Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
| title | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
| title_full | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
| title_fullStr | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
| title_full_unstemmed | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
| title_short | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
| title_sort | electrical conductivity through π π stacking in a two dimensional porous gallium catecholate metal organic framework |
| url | https://hdl.handle.net/1721.1/148009 |
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