Efficient Modeling for Short Channel MOS Circuit Cimulation
Existing circuit models for short-channel MOS transistors represent a compromise between speed and ease of use. Empirical models are very fast to evaluate, but their parameters must be fitted from experimental measurements. Theoretical models require longer computation time, but they may be used t...
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2023
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| Online Access: | https://hdl.handle.net/1721.1/149555 |
| Summary: | Existing circuit models for short-channel MOS transistors represent a compromise between speed and ease of use. Empirical models are very fast to evaluate, but their parameters must be fitted from experimental measurements. Theoretical models require longer computation time, but they may be used to predict the performance of new, unmeasured MOS technologies since their parameters are not curve-fitted from experimental data. |
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