GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
National Aeronautics and Space Administration (NASA)
| Main Authors: | , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
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Institute of Electrical and Electronics Engineers (IEEE)
2023
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| Online Access: | https://hdl.handle.net/1721.1/150481 |
| _version_ | 1826188456407072768 |
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| author | Yuan, Mengyang Xie, Qingyun Fu, Kai Hossain, Toiyob Niroula, John Greer, James A. Chowdhury, Nadim Zhao, Yuji Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Yuan, Mengyang Xie, Qingyun Fu, Kai Hossain, Toiyob Niroula, John Greer, James A. Chowdhury, Nadim Zhao, Yuji Palacios, Tomas |
| author_sort | Yuan, Mengyang |
| collection | MIT |
| description | National Aeronautics and Space Administration (NASA) |
| first_indexed | 2024-09-23T07:59:56Z |
| format | Article |
| id | mit-1721.1/150481 |
| institution | Massachusetts Institute of Technology |
| last_indexed | 2024-09-23T07:59:56Z |
| publishDate | 2023 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1504812023-04-11T03:55:46Z GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform Yuan, Mengyang Xie, Qingyun Fu, Kai Hossain, Toiyob Niroula, John Greer, James A. Chowdhury, Nadim Zhao, Yuji Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials National Aeronautics and Space Administration (NASA) Lockheed Martin Corporation under grant no. 025570-00036, Air Force Office of Scientific Research (AFOSR) under grant no. FA9550-22-1-0367 2023-04-10T15:19:06Z 2023-04-10T15:19:06Z 2022-09-05 Article http://purl.org/eprint/type/JournalArticle 0741-3106 1558-0563 https://hdl.handle.net/1721.1/150481 Yuan, Mengyang, Xie, Qingyun, Fu, Kai, Hossain, Toiyob, Niroula, John et al. 2022. "GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform." IEEE Electron Device Letters, 43 (11). 10.1109/LED.2022.3204566 10.1109/led.2022.3204566 IEEE Electron Device Letters Creative Commons Attribution-Noncommercial-Share Alike https://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Yuan |
| spellingShingle | Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials Yuan, Mengyang Xie, Qingyun Fu, Kai Hossain, Toiyob Niroula, John Greer, James A. Chowdhury, Nadim Zhao, Yuji Palacios, Tomas GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| title | GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| title_full | GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| title_fullStr | GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| title_full_unstemmed | GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| title_short | GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform |
| title_sort | gan ring oscillators operational at 500 °c based on a gan on si platform |
| topic | Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials |
| url | https://hdl.handle.net/1721.1/150481 |
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