GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

National Aeronautics and Space Administration (NASA)

Bibliographic Details
Main Authors:	Yuan, Mengyang, Xie, Qingyun, Fu, Kai, Hossain, Toiyob, Niroula, John, Greer, James A., Chowdhury, Nadim, Zhao, Yuji, Palacios, Tomas
Other Authors:	Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format:	Article
Published:	Institute of Electrical and Electronics Engineers (IEEE) 2023
Subjects:	Electrical and Electronic Engineering Electronic, Optical and Magnetic Materials
Online Access:	https://hdl.handle.net/1721.1/150481

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