Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C

National Aeronautics and Space Administration (NASA)

Bibliographic Details
Main Authors: Xie, Qingyun, Yuan, Mengyang, Niroula, John, Sikder, Bejoy, Luo, Shisong, Fu, Kai, Rajput, Nitul S., Pranta, Ayan Biswas, Yadav, Pradyot, Zhao, Yuji, Chowdhury, Nadim, Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Published: IEEE 2023
Online Access:https://hdl.handle.net/1721.1/151274
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author Xie, Qingyun
Yuan, Mengyang
Niroula, John
Sikder, Bejoy
Luo, Shisong
Fu, Kai
Rajput, Nitul S.
Pranta, Ayan Biswas
Yadav, Pradyot
Zhao, Yuji
Chowdhury, Nadim
Palacios, Tomás
author2 Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
author_facet Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Xie, Qingyun
Yuan, Mengyang
Niroula, John
Sikder, Bejoy
Luo, Shisong
Fu, Kai
Rajput, Nitul S.
Pranta, Ayan Biswas
Yadav, Pradyot
Zhao, Yuji
Chowdhury, Nadim
Palacios, Tomás
author_sort Xie, Qingyun
collection MIT
description National Aeronautics and Space Administration (NASA)
first_indexed 2024-09-23T16:41:08Z
format Article
id mit-1721.1/151274
institution Massachusetts Institute of Technology
last_indexed 2024-09-23T16:41:08Z
publishDate 2023
publisher IEEE
record_format dspace
spelling mit-1721.1/1512742023-08-01T03:03:34Z Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C Xie, Qingyun Yuan, Mengyang Niroula, John Sikder, Bejoy Luo, Shisong Fu, Kai Rajput, Nitul S. Pranta, Ayan Biswas Yadav, Pradyot Zhao, Yuji Chowdhury, Nadim Palacios, Tomás Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science National Aeronautics and Space Administration (NASA) Lockheed Martin Corp., AFOSR, Qualcomm Inc. 2023-07-31T19:27:44Z 2023-07-31T19:27:44Z 2023-06-11 Article http://purl.org/eprint/type/ConferencePaper https://hdl.handle.net/1721.1/151274 Xie, Qingyun, Yuan, Mengyang, Niroula, John, Sikder, Bejoy, Luo, Shisong et al. 2023. "Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C." 2023 IEEE Symposium on VLSI Technology and Circuits. 10.23919/VLSITechnologyandCir57934.2023.10185364 10.23919/vlsitechnologyandcir57934.2023.10185364 Creative Commons Attribution-Noncommercial-Share Alike https://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf IEEE Xie
spellingShingle Xie, Qingyun
Yuan, Mengyang
Niroula, John
Sikder, Bejoy
Luo, Shisong
Fu, Kai
Rajput, Nitul S.
Pranta, Ayan Biswas
Yadav, Pradyot
Zhao, Yuji
Chowdhury, Nadim
Palacios, Tomás
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
title Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
title_full Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
title_fullStr Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
title_full_unstemmed Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
title_short Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
title_sort towards dtco in high temperature gan on si technology arithmetic logic unit at 300 °c and cad framework up to 500 °c
url https://hdl.handle.net/1721.1/151274
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