Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C
National Aeronautics and Space Administration (NASA)
Main Authors: | , , , , , , , , , , , |
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Format: | Article |
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IEEE
2023
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Online Access: | https://hdl.handle.net/1721.1/151274 |
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author | Xie, Qingyun Yuan, Mengyang Niroula, John Sikder, Bejoy Luo, Shisong Fu, Kai Rajput, Nitul S. Pranta, Ayan Biswas Yadav, Pradyot Zhao, Yuji Chowdhury, Nadim Palacios, Tomás |
author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Xie, Qingyun Yuan, Mengyang Niroula, John Sikder, Bejoy Luo, Shisong Fu, Kai Rajput, Nitul S. Pranta, Ayan Biswas Yadav, Pradyot Zhao, Yuji Chowdhury, Nadim Palacios, Tomás |
author_sort | Xie, Qingyun |
collection | MIT |
description | National Aeronautics and Space Administration (NASA) |
first_indexed | 2024-09-23T16:41:08Z |
format | Article |
id | mit-1721.1/151274 |
institution | Massachusetts Institute of Technology |
last_indexed | 2024-09-23T16:41:08Z |
publishDate | 2023 |
publisher | IEEE |
record_format | dspace |
spelling | mit-1721.1/1512742023-08-01T03:03:34Z Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C Xie, Qingyun Yuan, Mengyang Niroula, John Sikder, Bejoy Luo, Shisong Fu, Kai Rajput, Nitul S. Pranta, Ayan Biswas Yadav, Pradyot Zhao, Yuji Chowdhury, Nadim Palacios, Tomás Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science National Aeronautics and Space Administration (NASA) Lockheed Martin Corp., AFOSR, Qualcomm Inc. 2023-07-31T19:27:44Z 2023-07-31T19:27:44Z 2023-06-11 Article http://purl.org/eprint/type/ConferencePaper https://hdl.handle.net/1721.1/151274 Xie, Qingyun, Yuan, Mengyang, Niroula, John, Sikder, Bejoy, Luo, Shisong et al. 2023. "Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C." 2023 IEEE Symposium on VLSI Technology and Circuits. 10.23919/VLSITechnologyandCir57934.2023.10185364 10.23919/vlsitechnologyandcir57934.2023.10185364 Creative Commons Attribution-Noncommercial-Share Alike https://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf IEEE Xie |
spellingShingle | Xie, Qingyun Yuan, Mengyang Niroula, John Sikder, Bejoy Luo, Shisong Fu, Kai Rajput, Nitul S. Pranta, Ayan Biswas Yadav, Pradyot Zhao, Yuji Chowdhury, Nadim Palacios, Tomás Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C |
title | Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C |
title_full | Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C |
title_fullStr | Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C |
title_full_unstemmed | Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C |
title_short | Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C |
title_sort | towards dtco in high temperature gan on si technology arithmetic logic unit at 300 °c and cad framework up to 500 °c |
url | https://hdl.handle.net/1721.1/151274 |
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