Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C

Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C

National Aeronautics and Space Administration (NASA)

Bibliographic Details
Main Authors: Xie, Qingyun, Yuan, Mengyang, Niroula, John, Sikder, Bejoy, Luo, Shisong, Fu, Kai, Rajput, Nitul S., Pranta, Ayan Biswas, Yadav, Pradyot, Zhao, Yuji, Chowdhury, Nadim, Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Published: IEEE 2023
Online Access:https://hdl.handle.net/1721.1/151274

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