Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration
Abstract Oxygen non-stoichiometry profoundly impacts the electrical, magnetic, and catalytic properties of metal oxide. Limited by the low mass and volume of thin oxide films, conventional quantification methods, such as thermogravimetry, are not directly applicable. While chemical ca...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Springer US
2023
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| Online Access: | https://hdl.handle.net/1721.1/152336 |
| _version_ | 1811093707768725504 |
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| author | Zhao, Yun Su, Hongyang Xu, Jianbing Chen, Shengru Liu, Peng Guo, Er-Jia Lin, Yuanhua Tuller, Harry L. Chen, Di |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Zhao, Yun Su, Hongyang Xu, Jianbing Chen, Shengru Liu, Peng Guo, Er-Jia Lin, Yuanhua Tuller, Harry L. Chen, Di |
| author_sort | Zhao, Yun |
| collection | MIT |
| description | Abstract
Oxygen non-stoichiometry profoundly impacts the electrical, magnetic, and catalytic properties of metal oxide. Limited by the low mass and volume of thin oxide films, conventional quantification methods, such as thermogravimetry, are not directly applicable. While chemical capacitance has been successfully applied to monitor oxygen non-stoichiometry in thin oxide films, detailed a-priori understanding of the defect chemistry is often very helpful in its interpretation. In this study, changes in non-stoichiometry in Pr doped CeO2 (PCO) thin films are measured by coulometric titration. I-V titration measurements are performed on electrochemical cells, over the temperature range from 550 to 700 ℃, oxygen partial pressure range from 10-4 to 0.21 atm, and bias range of -50 mV to 50 mV, to extract changes in stoichiometry. The results agree well with values obtained by chemical capacitance, demonstrating the utility in applying coulometric titration to investigate oxygen non-stoichiometry in oxide thin films. |
| first_indexed | 2024-09-23T15:49:22Z |
| format | Article |
| id | mit-1721.1/152336 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T15:49:22Z |
| publishDate | 2023 |
| publisher | Springer US |
| record_format | dspace |
| spelling | mit-1721.1/1523362024-09-17T04:22:50Z Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration Zhao, Yun Su, Hongyang Xu, Jianbing Chen, Shengru Liu, Peng Guo, Er-Jia Lin, Yuanhua Tuller, Harry L. Chen, Di Massachusetts Institute of Technology. Department of Materials Science and Engineering Abstract Oxygen non-stoichiometry profoundly impacts the electrical, magnetic, and catalytic properties of metal oxide. Limited by the low mass and volume of thin oxide films, conventional quantification methods, such as thermogravimetry, are not directly applicable. While chemical capacitance has been successfully applied to monitor oxygen non-stoichiometry in thin oxide films, detailed a-priori understanding of the defect chemistry is often very helpful in its interpretation. In this study, changes in non-stoichiometry in Pr doped CeO2 (PCO) thin films are measured by coulometric titration. I-V titration measurements are performed on electrochemical cells, over the temperature range from 550 to 700 ℃, oxygen partial pressure range from 10-4 to 0.21 atm, and bias range of -50 mV to 50 mV, to extract changes in stoichiometry. The results agree well with values obtained by chemical capacitance, demonstrating the utility in applying coulometric titration to investigate oxygen non-stoichiometry in oxide thin films. 2023-10-03T15:32:05Z 2023-10-03T15:32:05Z 2023-05-17 2023-09-28T03:25:11Z Article http://purl.org/eprint/type/JournalArticle https://hdl.handle.net/1721.1/152336 Zhao, Yun, Su, Hongyang, Xu, Jianbing, Chen, Shengru, Liu, Peng et al. 2023. "Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration." en https://doi.org/10.1007/s10832-023-00309-x Creative Commons Attribution-Noncommercial-Share Alike https://creativecommons.org/licenses/by-nc-sa/4.0/ The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature application/pdf Springer US Springer US |
| spellingShingle | Zhao, Yun Su, Hongyang Xu, Jianbing Chen, Shengru Liu, Peng Guo, Er-Jia Lin, Yuanhua Tuller, Harry L. Chen, Di Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration |
| title | Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration |
| title_full | Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration |
| title_fullStr | Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration |
| title_full_unstemmed | Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration |
| title_short | Measurement and control of oxygen non-stoichiometry in praseodymium-cerium oxide thin films by coulometric titration |
| title_sort | measurement and control of oxygen non stoichiometry in praseodymium cerium oxide thin films by coulometric titration |
| url | https://hdl.handle.net/1721.1/152336 |
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