Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors

Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors

Field-emission-based vacuum transistors have been proposed as promising candidates for future high-power and harsh-environment electronic devices. However, the lack of an integrated anode is still an issue for vertical field-emission vacuum transistors for some applications such as radiation-hard...

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Bibliographic Details
Main Authors: Shih, Pao-Chuan, Perozek, Joshua, Akinwande, Akintunde I., Palacios, Tomás
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Published: Institute of Electrical and Electronics Engineers (IEEE) 2024
Subjects:
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Online Access:https://hdl.handle.net/1721.1/153655

Internet

https://hdl.handle.net/1721.1/153655

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